NSVUMC3NT1G

NSVUMC3NT1G

$0.45
  • Description:TRANS NPN/PNP PREBIAS 0.15W SC88
  • Series:-

SKU:af49115a7390 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:TRANS NPN/PNP PREBIAS 0.15W SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:150mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package:SC-88A (SC-70-5/SOT-353)

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NSVUMC3NT1G

Overview

The NSVUMC3NT1G is a dual Bias Resistor Transistor (BRT) from onsemi, housed in an SC-88A/SOT-353 package. It integrates one PNP and one NPN transistor with monolithic bias resistor networks. Key electrical parameters include a collector-emitter voltage of 50 Vdc for both transistors and a maximum collector current of 100 mAdc. The device operates within a temperature range of -65°C to +150°C. Thermal resistance junction-to-ambient is 833 °C/W, with total package dissipation at 150 mW. DC current gain ranges from 35 to 60 depending on the specific transistor configuration.

Feature Summary

  • Integrates complementary PNP and NPN transistors with built-in bias resistors to replace discrete components
  • Reduces printed circuit board space and component count through surface mount packaging
  • Qualified under AEC-Q101 standards with PPAP capability for automotive applications

Applications

  • Low power surface mount applications requiring compact digital switching solutions
  • Automotive electronic systems requiring unique site control and qualification
  • General purpose logic level translation and interface circuits

Procurement Notes

Verify the NSV prefix indicates AEC-Q101 qualification and PPAP capability when sourcing for automotive or high-reliability projects. Confirm the SOT-353 package dimensions match the design footprint. Ensure the ordering suffix aligns with the required tape and reel quantity specifications provided in the manufacturer documentation.

Selection Notes

Select this component when a complementary pair of biased transistors is needed in a minimal footprint. Compare the internal resistor values against the application's base drive requirements. Verify that the 50 V collector-emitter voltage rating exceeds the maximum circuit operating voltage. Check thermal dissipation limits if mounting density is high.

Part Context

This part belongs to the UMC series of dual common base-collector bias resistor transistors. It shares the same package and general architecture as the UMC2NT1G and UMC5NT1G, differing primarily in the integrated resistor values. The NSV prefix specifically denotes automotive-grade manufacturing controls compared to the standard UMC variants.

Replacement Considerations

Direct pin-compatible substitutes within the same family include UMC3NT1G and NSVUMC2NT1G. Verify resistor ratios and current gain specifications before substitution to ensure circuit performance remains within acceptable limits.

NSVUMC3NT1GNSVUMC3NT1G
$0.45
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