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The NSVUMC5NT2G is a dual Bias Resistor Transistor (BRT) housed in an SC-88A/SOT-353 package, containing one PNP and one NPN silicon transistor with monolithic bias networks. It features a series base resistor and a base-emitter resistor for each device. The component supports a collector current of 100 mA and withstands collector-base and collector-emitter voltages up to 50 Vdc. Thermal resistance from junction to ambient is 833 °C/W, with an operating temperature range of -65°C to +150°C. Total package dissipation is rated at 150 mW at 25°C ambient.
Verify the specific ordering suffix and tape/reel specifications against the manufacturer's documentation before procurement. Confirm that the NSV prefix aligns with project requirements for automotive site control and PPAP capability. Ensure the SOT-353 package dimensions match the target PCB footprint constraints.
Select this component when a complementary pair of digital transistors is required in a minimal footprint. The UMC5 variant provides specific input resistance values suitable for standard logic interfacing. Verify that the 100 mA collector current rating meets the load requirements of the intended application.
This part belongs to the UMC2NT1 family of dual common base-collector bias resistor transistors manufactured by onsemi. The family includes variants like UMC2NT1G and UMC3NT1G, distinguished primarily by their internal resistor ratios and gain characteristics. All share the same SOT-353 physical package and general electrical limits.
Direct replacements within the same datasheet include UMC5NT2G. Cross-manufacturer equivalents require verification of pinout compatibility, voltage ratings, and internal resistor values.