NTLJD3115PTAG

FET, MOSFET Arrays Overview

The NTLJD3115PTAG is a dual P-channel MOSFET array manufactured by onsemi. It features a drain-source voltage (V_DSS) of -20 V and a continuous drain current (I_D) of -4.6 A at 25 °C. The device utilizes a logic-level gate architecture, ensuring compatibility with standard digital logic supplies. Key electrical characteristics include a maximum gate-source threshold voltage (V_GS(th)) of -1 V at I_GS = -250 µA and a typical gate charge (Q_g) of 7.8 nC measured at V_GS = 4.5 V. The input capacitance (C_iss) is specified at 450 pF when V_DS = 10 V. The component is housed in a surface-mount 6-WDFN package with dimensions of 2x2 mm, designed for thermal efficiency with a maximum power dissipation rating of 710 mW.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration integrated into a single compact package to reduce board space.
• Logic-level gate drive capability allows direct interfacing with low-voltage control signals.
• Surface-mount WDFN packaging provides efficient thermal management for high-density designs.

FET, MOSFET Arrays Applications

• Load switching in portable consumer electronics
• Power distribution networks in mobile devices
• Battery protection circuits requiring compact form factors

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact tape-and-reel quantities and environmental compliance status. Ensure that the procurement channel sources components directly from authorized distributors to prevent counterfeit parts. Cross-reference the date code and lot number with the latest quality certificates provided by the supplier before final acceptance.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required within strict spatial constraints. The -20 V rating suits low-voltage systems such as USB-powered devices or battery-operated equipment. Verify that the load current remains within the 4.6 A limit under expected operating temperatures to maintain reliability. Consider the 710 mW power dissipation limit when designing thermal paths on the PCB.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's Hyperjunction™ or similar advanced MOSFET portfolio, focusing on small-signal power switching applications. It complements other discrete semiconductors in the company's catalog by offering integrated dual-channel functionality. The WDFN package aligns with industry trends toward miniaturization in handheld and wearable technology sectors.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference data. Engineers should consult onsemi's official replacement guide or contact technical support for validated cross-references that match the pinout, voltage ratings, and package dimensions.