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The NTMD5836NLR2G is a single N-channel Power MOSFET manufactured by onsemi, designed for surface-mount applications in SOIC-8 packages. It features a 40V drain-source voltage rating and supports a continuous drain current of 9.2A. The device exhibits a low on-resistance of 14mΩ at room temperature, ensuring efficient power handling with a maximum power dissipation of 1.5W. Key switching parameters include a gate charge of 50nC, a threshold voltage of 3V, and rise/fall times of 45ns and 9ns respectively. Constructed from silicon, this component is supplied in reel, cut tape, or MouseReel formats.
Verify the specific ordering suffix to confirm packaging type, as variations exist between reel, cut tape, and MouseReel configurations. Confirm RoHS compliance status through official documentation before integration. Ensure the procurement channel provides valid traceability data matching the manufacturer's specifications for quality assurance purposes.
Select this component when a 40V N-channel MOSFET with low Rds(on) is required in an SOIC-8 footprint. Evaluate thermal performance against the 1.5W dissipation limit under expected operating conditions. Compare gate charge requirements with driver capabilities to ensure adequate switching speeds within the circuit design constraints.
This part belongs to the NTMS5835NL series family from onsemi, sharing similar electrical characteristics and package types. It serves as a standard solution for low-voltage power switching applications requiring compact surface-mount integration. The series is engineered for general-purpose power management tasks in consumer and industrial electronics.
Cross-reference with NTMS5835NLR2G for potential functional equivalence. Verify pinout compatibility and exact parameter matches before substitution.