NTMJS0D9N03CGTWG

Description：MOSFET N-CH 30V LFPAK8
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:f237797d7d78 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

NTMJS0D9N03CGTWG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V LFPAK8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTMJS0D9N03CGTWG

Description：MOSFET N-CH 30V LFPAK8
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：50A (Ta), 315A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：0.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs：131.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：9550 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.9W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-LFPAK
Package / Case：SOT-1205, 8-LFPAK56

Single FETs, MOSFETs datasheet and documents for NTMJS0D9N03CGTWG

NTMJS0D9N03CGTWG

Single FETs, MOSFETs Overview

The NTMJS0D9N03CGTWG is a single N-channel power MOSFET from onsemi, housed in an LFPAK8 (5x6mm) package. It features a drain-to-source voltage of 30 V and a maximum continuous drain current of 315 A at TC = 25°C. The device exhibits an ultra-low RDS(on) of 0.9 mΩ at VGS = 10 V and ID = 20 A. Key electrical parameters include a gate threshold voltage of 2.2 V, total gate charge of 131.4 nC, and input capacitance of 9550 pF. It supports an operating junction temperature range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Wide Safe Operating Area (SOA) designed to improve inrush current management capabilities.
Advanced LFPAK package providing excellent thermal conduction for high-power applications.
Ultra-low RDS(on) characteristics engineered to enhance overall system efficiency.

Single FETs, MOSFETs Applications

Hot Swap Applications
Motor Drive Systems
Power Load Switches
Battery Management Systems

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the TWG suffix to ensure correct packaging specifications. Confirm that the requested quantity aligns with the standard shipping unit of 3000 units per tape and reel. Ensure compliance with RoHS and halogen-free requirements as specified in the ordering information section of the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when high surge current handling and low conduction losses are critical. The wide SOA makes it suitable for applications requiring robust inrush current management. Evaluate thermal resistance values based on specific PCB copper pad sizes and ambient conditions rather than relying solely on steady-state ratings.

Single FETs, MOSFETs Part Context

This device belongs to onsemi's portfolio of single N-channel power MOSFETs optimized for high-current switching. It utilizes the LFPAK8 case style, designated as CASE 760AA, which integrates multiple drain pins for superior heat dissipation compared to traditional packages.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists or contact onsemi technical support for verified substitute part numbers. Do not assume functional equivalence with other 30V MOSFETs without validating pinout compatibility and thermal performance metrics.