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NTMSD3P102R2SG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 20V 2.34A 8SOIC. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTMSD3P102R2SG
- Description：MOSFET P-CH 20V 2.34A 8SOIC
- Series：FETKY™
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.34A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：85mOhm @ 3.05A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：750 pF @ 16 V
- FET Feature：Schottky Diode (Isolated)
- Power Dissipation (Max)：730mW (Ta)
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for NTMSD3P102R2SG
Single FETs, MOSFETs Overview
The NTMSD3P102R2SG is a P-Channel Enhancement-Mode Power MOSFET from onsemi's FETKY™ series. It features a 20V drain-source voltage rating and a continuous drain current of 2.34A. The device is housed in an 8-SOIC surface-mount package designed for lead-free compliance. This component is engineered for efficient power switching applications requiring low on-resistance and robust performance within compact board spaces.
Single FETs, MOSFETs Feature Summary
- FETKY™ technology optimized for high reliability and thermal stability
- Enhancement-mode P-Channel configuration for standard logic control
- Lead-free packaging compliant with environmental standards
Single FETs, MOSFETs Applications
- Power management circuits
- Load switching applications
- DC-DC converter output stages
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including the SG suffix to ensure correct SO-8 tape and reel packaging specifications. Confirm that the required quantity aligns with the manufacturer's standard reel size constraints. Cross-reference the datasheet revision date to ensure compatibility with current design requirements and regulatory standards before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a low-voltage P-Channel MOSFET is required for space-constrained designs. The 8-SOIC package offers a balance between thermal dissipation and footprint efficiency. Ensure the application current does not exceed the 2.34A continuous rating and that the gate drive voltage is compatible with the enhancement-mode threshold characteristics specified in the electrical parameters.
Single FETs, MOSFETs Part Context
This device belongs to onsemi's FETKY™ family, which utilizes advanced process technologies to deliver high performance in small packages. The FETKY™ line is designed to meet the demands of modern portable and industrial electronics by providing reliable switching capabilities with minimized parasitic effects and improved thermal handling compared to standard discrete solutions.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes must match the 20V P-Channel specification and 8-SOIC package. Verify pinout compatibility and thermal resistance values. Consult official cross-reference lists for approved alternatives that maintain identical electrical performance and mechanical dimensions.
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