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NTMTS0D7N06CTXG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 60.5A/464A 8DFNW. Review the specifications below when checking this part for your BOM.
The NTMTS0D7N06CTXG is a single N-channel Power MOSFET manufactured by onsemi, utilizing silicon technology. It features a PQFN-8 package with dimensions of 8.3x8.4 mm and supports surface mount installation. The device offers a drain-source breakdown voltage (Vds) of 60 V and a continuous drain current (Id) of 477 A at case temperature. Key electrical parameters include a maximum on-resistance (Rds(on)) of 680 uOhms, a gate charge (Qg) of 225 nC, and a threshold voltage (Vgs(th)) of 2.5 V. It operates within a temperature range of -55 C to +175 C with a power dissipation rating of 294.6 W.
Verify the exact part number suffix against official manufacturer documentation to ensure correct packaging and tape specifications. Confirm that the component meets all required environmental standards and RoHS compliance before integration into final designs. Cross-reference datasheet revisions to validate parameter consistency.
Select this component for applications requiring high current handling in a compact footprint. Evaluate thermal resistance requirements against the specified power dissipation limits. Ensure gate drive voltages remain within the safe operating area defined by the threshold and maximum ratings.
This component belongs to the onsemi MOSFET portfolio, designed for general-purpose power switching. It utilizes advanced silicon planar technology to achieve low conduction losses. The PQFN package provides improved thermal performance compared to traditional packages.
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing.
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