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NTTFS5116PLTWG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 60V 5.7A 8WDFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTTFS5116PLTWG
- Description：MOSFET P-CH 60V 5.7A 8WDFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：5.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：52mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1258 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 40W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-WDFN (3.3x3.3)
- Package / Case：8-PowerWDFN
Single FETs, MOSFETs datasheet and documents for NTTFS5116PLTWG
Single FETs, MOSFETs Overview
The NTTFS5116PLTWG is a single P-Channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an 8-WDFN (3.3x3.3) surface-mount package. The device features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 5.7 A. Its maximum on-resistance is specified at 72 mOhms, with a gate charge of 25 nC. The component supports a wide operating temperature range from -55°C to +175°C junction temperature and offers a power dissipation capacity of 40 W.
Single FETs, MOSFETs Feature Summary
- Single-channel P-Channel configuration for efficient high-side switching applications
- Enhancement mode operation optimized for low on-resistance performance
- Automotive-grade qualification ensuring reliability under demanding conditions
- Compact surface-mount footprint designed for space-constrained PCB layouts
Single FETs, MOSFETs Applications
- Automotive load switching circuits requiring robust P-Channel control
- Power distribution units within automotive electronic systems
- High-side switch implementations in vehicle body electronics
- Battery management system protection and isolation stages
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'TAG' against the requested model to ensure correct packaging and automotive grade alignment. Confirm that the 8-WDFN package dimensions match the target PCB footprint requirements. Check for RoHS compliance status and REACH SVHC declarations prior to integration. Ensure the supply chain source provides valid traceability documentation for automotive quality standards.
Single FETs, MOSFETs Selection Notes
Select this component when a 60V P-Channel MOSFET with moderate current handling is required for automotive environments. Compare the 72 mOhm on-resistance against thermal constraints to determine heat dissipation needs. Evaluate the 5.7 A continuous current rating against peak load demands. Consider the 8-WDFN package size relative to available board space and soldering capabilities.
Single FETs, MOSFETs Part Context
This part belongs to the NVTFS5116PL series of automotive-grade power MOSFETs. It is designed specifically for high-reliability applications in the automotive sector. The series emphasizes low on-resistance and fast switching characteristics. It complements other components in power management and switching architectures.
Single FETs, MOSFETs Replacement Considerations
The NTTFS5116PLTAG is a verified alternative variant within the same family. Verify pin compatibility and electrical parameter equivalence before substitution. Ensure the replacement matches the specific automotive qualification requirements of the original design.
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