NUF2042XV6T1

Overview

The onsemi NUF2042XV6T1 is a bidirectional ESD protection diode configured as a complex array with five chip elements. It features a maximum reverse standoff voltage (Vwm) of 3.3V and a breakdown voltage (Vbr) of 5.6V at a test current of 1mA. The device offers a peak pulse power dissipation of 0.22W and a maximum reverse leakage current of 100nA. Housed in an ESV surface-mount package measuring 1.7mm x 1.3mm x 0.6mm, it operates within a temperature range of -55°C to 125°C.

Feature Summary

• Integrated ESD protection for signal lines
• Bidirectional clamping capability
• Compact surface-mount packaging

Applications

• USB data line protection
• GPIO interface protection
• Audio line protection

Procurement Notes

Verify the specific suffix 'V6' against official datasheets to confirm pinout and electrical characteristics match design requirements. Ensure the ESV package dimensions align with PCB footprint constraints. Confirm RoHS compliance status through manufacturer documentation prior to integration.

Selection Notes

Select this component for applications requiring low capacitance and bidirectional protection on 3.3V logic lines. Evaluate the 0.22W peak pulse rating against expected transient energy levels. Consider the small physical footprint when space-constrained designs are prioritized over higher power handling capabilities.

Part Context

This part belongs to onsemi's electrostatic discharge protection portfolio, designed specifically for safeguarding sensitive electronic interfaces. It integrates multiple diodes into a single compact package to provide comprehensive protection for multi-line configurations commonly found in consumer electronics and computing peripherals.

Replacement Considerations

NUF2042XV6T1G is the same component with RoHS certification indicated by the 'G' suffix. Verify if the non-G version meets environmental regulations for the target market before substitution.