NV6113-RA

Power Driver Modules Overview

The NV6113-RA is a single GaNFast power IC from Navitas Semiconductor, integrating a 650V eMode GaN FET with a gate driver and logic control in an 8-pin PQFN (5x6mm) package. It features a nominal on-resistance of 300mΩ and supports a supply voltage range of 10V to 24V. The device delivers a maximum output current of 5A with non-inverting PWM input interface. Operating temperatures span from -40°C to +125°C, ensuring reliability in demanding environments.

Power Driver Modules Feature Summary

• Monolithic integration of high-voltage GaN FET, gate driver, and digital logic for simplified design
• High dV/dt immunity and programmable turn-on slew rate to minimize electromagnetic interference
• Zero reverse recovery charge inherent to the enhancement-mode GaN technology
• Compatible with standard 5V and 15V logic inputs for easy interfacing

Power Driver Modules Applications

• AC-DC and DC-DC converters including buck, boost, half-bridge, and full-bridge topologies
• Active clamp flyback and LLC resonant converters for high-efficiency power supplies
• Mobile fast chargers, laptop adapters, and LED lighting drivers
• Solar microinverters and Class D audio amplifiers

Power Driver Modules Procurement Notes

Verify the specific suffix 'RA' against the manufacturer's official datasheet to confirm packaging configuration, as suffixes often denote tape-and-reel quantities or specific handling requirements. Ensure compatibility with RoHS and REACH regulations if required by your region. Cross-reference the exact part number with authorized distributors to avoid counterfeit components, as surface markings must match official documentation precisely.

Power Driver Modules Selection Notes

Select this component when designing for frequencies above 2MHz where low parasitic inductance and zero reverse recovery are critical. The 300mΩ resistance offers a balance between conduction loss and cost compared to lower resistance variants. Consider the 5A current limit and 650V blocking capability to ensure adequate headroom for your specific load and voltage stress conditions without over-specifying.

Power Driver Modules Part Context

This device belongs to the GaNFast family, which combines gallium nitride power switches with proprietary control circuitry. The NV6113 variant specifically targets applications requiring moderate current handling with robust noise immunity. It represents a shift from discrete MOSFET solutions to integrated power modules, reducing board space and simplifying thermal management in compact consumer electronics and industrial power systems.

Power Driver Modules Replacement Considerations

The NV6113 is the base model; the NV6113-RA indicates a specific packaging variant. Direct functional substitutes within the same series include the NV6115 (170mΩ, 8A) for higher current needs or the NV6117 (120mΩ) for lower resistance applications. Verify pinout and thermal pad connections remain identical before swapping to ensure mechanical compatibility.