NV6115-RA

Power Driver Modules Overview

The NV6115-RA is a GaNFast single power IC integrating a 650 V enhancement-mode GaN FET with a gate driver. It features an on-resistance of 170 mΩ and supports a supply voltage range of 10 V to 24 V. The device delivers a maximum output current of 8 A in an 8-PowerVDFN (5x6 mm) surface-mount package. It operates within a temperature range of -40°C to +125°C.

Power Driver Modules Feature Summary

• Monolithic integration of a 650 V GaN FET, gate driver, and logic circuitry for simplified design.
• Optimized for high-frequency soft-switching topologies to enable MHz+ operation.
• High dv/dt immunity and programmable turn-on slew rate control.

Power Driver Modules Applications

• AC-to-DC and DC-to-DC converters
• LLC resonant and active clamp flyback topologies
• Mobile fast chargers and laptop adapters

Power Driver Modules Procurement Notes

Verify the specific suffix against official documentation to confirm packaging variations. Confirm RoHS compliance status directly from the manufacturer datasheet. Ensure ESD handling protocols are followed during assembly due to the sensitivity of the GaN technology.

Power Driver Modules Selection Notes

Select this component for designs requiring high power density and efficiency in compact form factors. The integrated driver reduces external component count compared to discrete solutions. Evaluate thermal management requirements given the small QFN footprint and high current capability.

Power Driver Modules Part Context

This part belongs to the GaNFast series from Navitas Semiconductor. It represents a class of wide-bandgap power ICs designed to replace traditional silicon MOSFETs in high-frequency applications. The series focuses on reducing system size and improving energy conversion efficiency.

Power Driver Modules Replacement Considerations

NV6115