Power Driver Modules NV6127-RA product image

NV6127-RA

$5.59
  • Description:IC PWR GANFAST 650V 12OHM 6X8QFN
  • Series:GaNFast™

SKU:5e6f386bed39 Category: Brand:

  
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NV6127-RA is listed in the Power Driver Modules range at ChipApex. The manufacturer field lists Navitas Semiconductor, Inc.. Its product description is IC PWR GANFAST 650V 12OHM 6X8QFN. Review the specifications below when checking this part for your BOM.

Power Driver Modules specifications for NV6127-RA

  • Description:IC PWR GANFAST 650V 12OHM 6X8QFN
  • Series:GaNFast™
  • Mfr:Navitas Semiconductor, Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Type:MOSFET
  • Configuration:Half Bridge
  • Current:12:00 AM
  • Voltage:650 V
  • Voltage - Isolation:-
  • Mounting Type:Surface Mount
  • Package / Case:30-PowerVQFN
  • Grade:-
  • Qualification:-

Power Driver Modules datasheet and documents for NV6127-RA

NV6127-RA

Power Driver Modules Overview

The NV6127-RA is a GaNFast single half-bridge power IC manufactured by Navitas Semiconductor. It integrates a 650 V eMode GaN FET with a gate driver in a PQFN-6x8-30 package. The device features an on-resistance of 125 mOhm and supports surface mount installation. Operating temperatures range from -40 °C to +125 °C. It is classified as Not Recommended for New Design (NRND).

Power Driver Modules Feature Summary

  • Integrates a 650 V enhancement-mode GaN field-effect transistor with a dedicated gate driver.
  • Configured as a single half-bridge topology within a compact PQFN-6x8-30 surface-mount package.
  • Designed for high-frequency operation with low thermal resistance characteristics.

Power Driver Modules Applications

  • AC/DC and DC/DC power conversion systems
  • Half-bridge and full-bridge converter topologies
  • High-density server and telecom power supplies

Power Driver Modules Procurement Notes

Verify the current lifecycle status, as the component is designated as Not Recommended for New Design. Confirm package compatibility with the PQFN-6x8-30 footprint. Ensure design reviews account for the specific 125 mOhm on-resistance requirements. Check for available replacement alternatives if long-term supply assurance is required for production.

Power Driver Modules Selection Notes

Select this component for applications requiring a 650 V rating with a 125 mOhm conduction loss profile. The integrated half-bridge configuration simplifies layout compared to discrete solutions. Verify that the operating temperature range of -40 °C to +125 °C meets system environmental constraints. Consider the NRND status when planning future product iterations.

Power Driver Modules Part Context

The NV6127-RA belongs to the GaNFast series of monolithic power ICs from Navitas Semiconductor. These devices combine wide bandgap technology with digital control logic to enable high-efficiency power conversion. The part is distinct from other variants in the series by its specific 125 mOhm resistance and half-bridge architecture.

Power Driver Modules Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer resources for potential obsolescence management strategies or alternative series components.

NV6127-RANV6127-RA
$5.59
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