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NV6127-RA is listed in the Power Driver Modules range at ChipApex. The manufacturer field lists Navitas Semiconductor, Inc.. Its product description is IC PWR GANFAST 650V 12OHM 6X8QFN. Review the specifications below when checking this part for your BOM.
The NV6127-RA is a GaNFast single half-bridge power IC manufactured by Navitas Semiconductor. It integrates a 650 V eMode GaN FET with a gate driver in a PQFN-6x8-30 package. The device features an on-resistance of 125 mOhm and supports surface mount installation. Operating temperatures range from -40 °C to +125 °C. It is classified as Not Recommended for New Design (NRND).
Verify the current lifecycle status, as the component is designated as Not Recommended for New Design. Confirm package compatibility with the PQFN-6x8-30 footprint. Ensure design reviews account for the specific 125 mOhm on-resistance requirements. Check for available replacement alternatives if long-term supply assurance is required for production.
Select this component for applications requiring a 650 V rating with a 125 mOhm conduction loss profile. The integrated half-bridge configuration simplifies layout compared to discrete solutions. Verify that the operating temperature range of -40 °C to +125 °C meets system environmental constraints. Consider the NRND status when planning future product iterations.
The NV6127-RA belongs to the GaNFast series of monolithic power ICs from Navitas Semiconductor. These devices combine wide bandgap technology with digital control logic to enable high-efficiency power conversion. The part is distinct from other variants in the series by its specific 125 mOhm resistance and half-bridge architecture.
Public confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer resources for potential obsolescence management strategies or alternative series components.
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