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NV6247C is listed in the Full Half-Bridge (H Bridge) Drivers range at ChipApex. The manufacturer field lists Navitas Semiconductor, Inc.. Its product description is GANSENSE HALF-BRIDGE 650V 160/16. Review the specifications below when checking this part for your BOM.
The NV6247C is a GaNSense Half-Bridge Power IC from Navitas Semiconductor, designed for high-frequency motor drive applications. It integrates two GaN FETs with drivers, control, sensing, and protection in a PQFN-32 package. The device supports an input voltage range of 10 V to 24 V and provides a regulated output voltage between 4.4 V and 5.5 V. It operates within a temperature range of -55°C to +150°C.
Verify the specific suffix 'C' against official datasheets to confirm exact electrical tolerances and thermal characteristics. Confirm availability status as distribution channels may indicate restricted supply or limited stock levels. Ensure the ordering code matches the required package variant and lead time requirements before finalizing procurement.
Select this component for designs requiring integrated GaN half-bridge functionality with built-in current sensing. It is suitable for applications needing high switching frequencies up to the MHz range. Consider the PQFN-32 package dimensions for PCB layout constraints and thermal management requirements relative to the target power density.
This part belongs to the GaNSense Half-Bridge Motor Drive series, which represents a monolithic integration of power switches and control logic. It replaces discrete solutions comprising separate transistors, drivers, and sensors, thereby reducing system complexity and component count while improving reliability and performance in power electronics systems.
The NV6247M-RA is a related model within the same GaNSense family offering similar half-bridge capabilities. Verify pinout compatibility and specific on-resistance values when substituting. Consult official documentation to ensure functional equivalence for the intended motor drive application.
It utilizes GaNSense technology, which integrates GaN FETs with bidirectional lossless current sensing and autonomous protection features.
The device operates within a junction temperature range of -55°C to +150°C.
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