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NV6512C
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Product Detailed Parameters
- Description：650V 55MO GAN POWER IC TOLL-4L
- Series：-
- Mfr：Navitas Semiconductor, Inc.
- Package：Cut Tape (CT),Cut Tape (CT)
- Switch Type：-
- Number of Outputs：-
- Ratio - Input:Output：-
- Output Configuration：-
- Output Type：-
- Interface：-
- Voltage - Load：-
- Voltage - Supply (Vcc/Vdd)：-
- Current - Output (Max)：-
- Rds On (Typ)：-
- Input Type：-
- Features：-
- Fault Protection：-
- Operating Temperature：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
- Grade：-
- Qualification：-
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Overview
The NV6512C is a GaNSafe power IC from Navitas Semiconductor, integrating a 650V Gallium Nitride (GaN) transistor with an intelligent driver. It features a TOLL-4L thermally-enhanced package for improved heat dissipation. Key electrical specifications include a continuous drain-source voltage (VDS) of 650V and a transient rating of 800V. The device offers a maximum on-resistance (RDS(ON)) of 55 mΩ at 25°C and supports a continuous drain current (IDS) of 41A.
Feature Summary
- Integrates a 650V GaN power switch with a dedicated gate driver in a single package
- Utilizes TOLL-4L packaging to enhance thermal performance and reduce parasitic inductance
- Provides high-voltage transient robustness up to 800V
Applications
- High-frequency soft-switching power converters
- Server and data center power supplies
- Consumer adapter designs requiring high power density
Procurement Notes
Verify the specific ordering suffix when sourcing components, as variations such as -RA may exist. Confirm package type and thermal characteristics against your design requirements. Ensure compatibility with existing gate drive circuits. Check manufacturer documentation for latest revisions and handling instructions.
Selection Notes
Select this component for applications demanding high efficiency and power density. The integrated driver simplifies layout compared to discrete solutions. Consider the 55 mΩ RDS(ON) for conduction loss calculations. Evaluate the TOLL-4L package suitability for your thermal management strategy and PCB space constraints.
Part Context
This part belongs to the GaNSafe family, which combines GaN transistors with proprietary control logic. It targets modern power supply architectures seeking to replace silicon MOSFETs. The integration reduces component count and improves reliability by minimizing external gate resistance dependencies.
Replacement Considerations
Direct substitutes are not explicitly confirmed in public datasheets. Evaluate alternative GaN devices from Navitas or other manufacturers based on VDS, RDS(ON), and package compatibility. Verify pinout and driver interface similarities before substitution.
