NV6514C

Overview

The NV6514C-RA is a GaNSafe discrete Gallium Nitride Field-Effect Transistor (GaN FET) manufactured by Navitas Semiconductor. It features an N-channel configuration housed in a TOLL-4L surface-mount package. The device supports a drain-source voltage of 650V and delivers a continuous drain current of 90A with a maximum on-resistance of 25 milliohms. It integrates a low-side driver with controlled slew rate, fixed over-current protection, thermal shutdown, and short-circuit fault handling. Operating junction temperature ranges from -40°C to +150°C.

Feature Summary

• Integrated low-side gate driver with controlled slew rate for optimized switching performance
• Built-in comprehensive fault protection including fixed over-current limit, thermal shutdown, and short-circuit detection
• High-efficiency power switching capability utilizing advanced GaN technology

Applications

• High-density AC-DC power adapters and chargers
• Point-of-load (POL) DC-DC converters
• Industrial motor drives and control systems

Procurement Notes

Verify the specific suffix designation when ordering, as the NV6514C-RA indicates a reel packaging format which may differ from cut-tape or tube variants. Confirm that the selected component matches the required pinout and thermal pad specifications for your PCB layout. Ensure compatibility with the intended gate drive voltage levels and check for any recent lifecycle status updates directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component for applications requiring high current density and integrated protection within a compact footprint. The built-in driver simplifies design complexity compared to discrete solutions. Evaluate the thermal management requirements carefully due to the high current capacity. Consider the controlled slew rate feature if electromagnetic interference (EMI) reduction is a priority in the target system design.

Part Context

This part belongs to the GaNSafe family, which combines GaN power transistors with intelligent gate drivers. Unlike bare GaN FETs, these integrated devices offer enhanced reliability and ease of use by embedding critical protection logic directly alongside the power switch. This integration reduces board space and improves overall system robustness in modern power electronics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin-to-pin compatibility and electrical parameter equivalence with alternative GaN FETs from other manufacturers if sourcing constraints require it.