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The NVMFS5C410NLAFT1G is a single-channel N-channel Power MOSFET manufactured by onsemi. It utilizes silicon technology and features an SO-8FL (T6) surface-mount package. The device supports a drain-source voltage of 40V and a continuous drain current of 330A at case temperature. Key electrical parameters include a maximum on-resistance of 900 microohms at 10V gate drive, a gate charge of 4.156 nC, and a power dissipation rating of 167W at case temperature. It operates within a junction temperature range of -55°C to +175°C and holds AEC-Q101 automotive qualification.
Verify the specific suffix 'AFT1G' against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure that the requested part number matches the exact marking code required for your assembly process. Cross-reference the datasheet revision date to confirm compatibility with your design requirements before finalizing procurement orders.
Select this component when designing circuits requiring high current capacity within a compact automotive-compatible package. Consider the 40V voltage rating and low Rds(on) characteristics for efficient power management. Evaluate thermal management strategies given the 167W case power dissipation rating to ensure reliable operation under load conditions.
This part belongs to the NVMFS5C series of automotive-grade Power MOSFETs from onsemi. The series is designed for high-efficiency switching applications in automotive electronics. The NVMFS5C410NLAFT1G specifically targets applications needing high current density and low loss in a small form factor, aligning with modern automotive electrification trends.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout and parameter compatibility if considering alternative manufacturers or different suffixes within the same family.