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NVT4558HKX is listed in the Translators, Level Shifters range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is IC SIM CARD LEVEL TRANS XQFN10. Review the specifications below when checking this part for your BOM.
The NVT4558HKX is a SIM card interface level translator designed to connect a SIM card with a single low-voltage host side interface operating between 1.08 V and 1.98 V. It contains three level translators converting data, RSTn, and CLKn signals for SIM supply voltages ranging from 1.62 V to 3.6 V. The device supports clock speeds up to 10 MHz with a propagation delay of 15 ns. It operates within an ambient temperature range of -40 °C to +85 °C and consumes a typical quiescent current of 1 μA in shutdown mode.
Verify the ordering part number NVT4558HKX corresponds to the XQFN10 package configuration. Confirm the ambient temperature rating aligns with system requirements (-40 °C to +85 °C). Ensure the host voltage range (1.08 V to 1.98 V) matches the processor specifications. Validate compliance with ISO-7816 standards for the specific application environment.
Select this component for designs requiring simultaneous EMI filtering and voltage translation for SIM interfaces. It is optimized for mobile phone processors supporting 1.2 V and 1.8 V I/O. Consider the automatic enable/disable functionality if hardware control pins are unavailable. Verify that the 10-pin XQFN10 package footprint fits the PCB layout constraints.
The NVT4558HKX belongs to the NVT4558 series of voltage level translators manufactured by NXP Semiconductors. It is specifically engineered for SIM card applications, differentiating itself through integrated EMI suppression and ESD protection capabilities. This integration reduces the need for external components typically required for signal integrity and protection in mobile communication devices.
NVT4557: Similar SIM card interface level translator with EMI filter and ESD protection.
When the EN pin is asserted LOW, the device initiates a shutdown sequence by powering down the RST_SIM channel first, followed sequentially by CLK_SIM and IO_SIM. Internal pull-down resistors ensure these channels go LOW during the process.
The level shifting buffers utilize a zero-clamping concept to keep ESD stress away from the host controller. The voltage translator discharges any ESD stress directly to the supply ground, protecting the host side.
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