NX2301P,215

Single FETs, MOSFETs Overview

The NX2301P,215 is a P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology in an SOT23 package. It features a drain-source voltage of -20 V and a continuous drain current of -2 A at 25 °C. The device supports low voltage gate drive with RDSon rated at 1.8 V. Key electrical parameters include a maximum RDSon of 120 mΩ at VGS = -4.5 V and ID = -1 A. Gate-source voltage limits are ±8 V, with a peak drain current capability of -6 A for single pulses.

Single FETs, MOSFETs Feature Summary

• Utilizes Trench MOSFET technology for very fast switching performance.
• Rated for low voltage gate drive operation at 1.8 V.
• Qualified according to AEC-Q101 automotive standards.

Single FETs, MOSFETs Applications

• Relay driver
• High-speed line driver
• High-side load switch
• Switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component status remains active in the latest Nexperia product data sheet. Ensure design compliance with absolute maximum ratings, particularly regarding junction temperature and thermal resistance constraints during operation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring compact surface-mount integration with high-speed switching capabilities. Consider the -20 V rating and -2 A current capacity against circuit requirements. Evaluate thermal management needs based on the specified junction-to-ambient resistance values for the intended PCB footprint and copper area.

Single FETs, MOSFETs Part Context

This part belongs to the Nexperia P-channel Trench MOSFET family designed for general-purpose switching. It is housed in the standard SOT23 (TO-236AB) plastic surface-mounted package. The device is engineered to provide efficient control in low-voltage digital and analog switching environments while maintaining robust automotive qualification standards.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence with other P-channel MOSFETs without verifying pinout, voltage ratings, and thermal characteristics against the NX2301P specifications.

Single FETs, MOSFETs FAQ

What is the maximum drain-source breakdown voltage?

The maximum drain-source breakdown voltage (V(BR)DSS) is -20 V when measured at ID = -250 μA and VGS = 0 V.

Is this device suitable for automotive applications?

Yes, the NX2301P is qualified in accordance with the Automotive Electronics Council (AEC) standard Q101.

What is the typical gate charge for this transistor?

The total gate charge (QG(tot)) is typically 4.5 nC under conditions of ID = -2.2 A, VDS = -6 V, and VGS = -4.5 V.