NXH040F120MNF1PG

NXH040F120MNF1PG

$62.83
  • Description:MOSFET 4N-CH 1200V 30A 22PIM
  • Series:-

SKU:772fb0926237 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 4N-CH 1200V 30A 22PIM
  • Series:-
  • Mfr:onsemi
  • Package:Tray
  • Technology:Silicon Carbide (SiC)
  • Configuration:4 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:30A (Tc)
  • Rds On (Max) @ Id, Vgs:56mOhm @ 25A, 20V
  • Vgs(th) (Max) @ Id:4.3V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs:122.1nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:1505pF @ 800V
  • Power - Max:74W (Tj)
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:22-PIM (33.8x42.5)
  • Grade:-
  • Qualification:-

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NXH040F120MNF1PG

Overview

The NXH040F120MNF1PG is a Silicon Carbide (SiC) MOSFET module manufactured by onsemi under the EliteSiC series. It features a four-channel N-configuration, forming a full-bridge topology within a 22-pin Power Integrated Module (PIM) package measuring 33.8 x 42.5 mm. The device supports a maximum drain-source voltage of 1200 V and delivers a continuous drain current of 51 A at case temperature. Key electrical parameters include a gate-source voltage range of -15 V to +25 V, a threshold voltage of 4.3 V at 20 mA, and a maximum gate charge of 213.5 nC at 20 V. Input capacitance is specified at 2420 pF at 800 V. The module operates between -40°C and +175°C junction temperature with a maximum power dissipation of 119 W.

Feature Summary

  • Four-channel N-configuration SiC MOSFET array designed for high-efficiency full-bridge applications
  • Integrated thermal management capabilities supporting operation up to 175°C junction temperature
  • Robust gate drive specifications accommodating standard industrial control voltages

Applications

  • High-frequency DC-DC converters requiring low switching losses
  • Industrial motor drives utilizing full-bridge topologies
  • Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific suffix PG against official datasheets to confirm pinout and terminal configuration compatibility. Ensure ordering quantities align with manufacturer tray packaging standards. Cross-reference RoHS compliance status with current regulatory requirements before finalizing procurement contracts.

Selection Notes

Select this component when designing circuits necessitating a monolithic four-switch bridge solution. Evaluate thermal resistance characteristics against system heat sink capabilities to maintain junction temperatures within the 175°C limit. Confirm that gate driver outputs can supply the required 213.5 nC charge without excessive delay.

Part Context

This part belongs to the NXH020 family of EliteSiC modules, which are engineered for compact power conversion designs. It shares the same physical footprint and mounting style as other variants in the series, facilitating design reuse across different current and resistance ratings within the same product line.

Replacement Considerations

NXH020F120MNF1PTG is a parameter-equivalent alternative within the same package and series.

NXH040F120MNF1PGNXH040F120MNF1PG
$62.83
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