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The NXH040F120MNF1PG is a Silicon Carbide (SiC) MOSFET module manufactured by onsemi under the EliteSiC series. It features a four-channel N-configuration, forming a full-bridge topology within a 22-pin Power Integrated Module (PIM) package measuring 33.8 x 42.5 mm. The device supports a maximum drain-source voltage of 1200 V and delivers a continuous drain current of 51 A at case temperature. Key electrical parameters include a gate-source voltage range of -15 V to +25 V, a threshold voltage of 4.3 V at 20 mA, and a maximum gate charge of 213.5 nC at 20 V. Input capacitance is specified at 2420 pF at 800 V. The module operates between -40°C and +175°C junction temperature with a maximum power dissipation of 119 W.
Verify the specific suffix PG against official datasheets to confirm pinout and terminal configuration compatibility. Ensure ordering quantities align with manufacturer tray packaging standards. Cross-reference RoHS compliance status with current regulatory requirements before finalizing procurement contracts.
Select this component when designing circuits necessitating a monolithic four-switch bridge solution. Evaluate thermal resistance characteristics against system heat sink capabilities to maintain junction temperatures within the 175°C limit. Confirm that gate driver outputs can supply the required 213.5 nC charge without excessive delay.
This part belongs to the NXH020 family of EliteSiC modules, which are engineered for compact power conversion designs. It shares the same physical footprint and mounting style as other variants in the series, facilitating design reuse across different current and resistance ratings within the same product line.
NXH020F120MNF1PTG is a parameter-equivalent alternative within the same package and series.