NXH200B100H4F2SG-R

NXH200B100H4F2SG-R

$151.23
  • Description:1500V F2 BOOST FOR SOLAR PIM
  • Series:-

SKU:fc8b61cd63e8 Category: Brand:

  
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Product Detailed Parameters

  • Description:1500V F2 BOOST FOR SOLAR PIM
  • Series:-
  • Mfr:onsemi
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:Three Level Inverter
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 100A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:36-PIM (56.7x48)
  • Voltage - Collector Emitter Breakdown (Max):1000 V
  • Current - Collector (Ic) (Max):100 A
  • Power - Max:93 W
  • Current - Collector Cutoff (Max):200 µA
  • Input Capacitance (Cies) @ Vce:6523 pF @ 20 V

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NXH200B100H4F2SG-R

Overview

The NXH200B100H4F2SG-R is a power module containing high-performance IGBTs with rugged anti-parallel diodes and an onboard thermistor. It utilizes F2 Boost Package (Case 180CJ) with solder pins. The BOOST IGBT features a VCES of 1000 V, IC of 100 A at Th=80°C, and VCE(sat) of 1.8 V typ at TJ=25°C. The PATH IGBT has a VCES of 1000 V, IC of 100 A, and VCE(sat) of 1.26 V typ at TJ=25°C. Diode ratings include VRRM up to 1600 V for BOOST inverse diodes and 1200 V for PATH/BOOST diodes. The module operates within a junction temperature range of -40°C to 150°C.

Feature Summary

  • Extremely efficient trench with field stop technology
  • Low switching loss reduces system power dissipation
  • F2 package with solder pins

Applications

  • Solar Inverter
  • Uninterruptible Power Supplies

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm shipping configuration. The NXH200B100H4F2SG-R variant is shipped in blister trays containing 20 units per package. Confirm that the component meets Pb-Free and Halide-Free requirements as specified in the manufacturer's ordering information before finalizing procurement specifications.

Selection Notes

Select this module for applications requiring high-efficiency power conversion with integrated thermal monitoring. Ensure the design accommodates the 1000 V collector-emitter voltage rating and the 100 A continuous current capability at a heatsink temperature of 80°C. Verify that the gate drive circuitry supports the required ±20 V gate-emitter voltage limits and accounts for the total gate charge characteristics during switching transitions.

Part Context

This component belongs to the F2 Boost Power Module series from onsemi. It integrates BOOST and PATH circuits into a single compact unit. The module combines silicon IGBTs with fast recovery diodes to optimize performance in high-frequency switching environments. The inclusion of an NTC thermistor allows for precise internal temperature tracking without external sensors.

Replacement Considerations

Direct replacements must match the F2 package dimensions and pinout configuration. Verify that substitute modules maintain equivalent electrical ratings, specifically the 1000 V blocking voltage and 100 A current capacity. Ensure thermal resistance values are comparable to maintain the original system's cooling design integrity.

NXH200B100H4F2SG-RNXH200B100H4F2SG-R
$151.23
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