NXH200T120H3Q2F2STG

Overview

The NXH200T120H3Q2F2STG is a silicon IGBT power module from onsemi, belonging to the EliteSiC series. It utilizes Q2PACK-200A packaging and features a half-bridge configuration. The device supports a maximum collector-emitter voltage of 1200V and provides a continuous collector current of 200A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.05V and a power dissipation rating of 158W. The module operates within a temperature range of -40°C to +150°C.

Feature Summary

• Integrates EliteSiC technology for enhanced switching performance
• Utilizes Q2PACK-200A package for robust thermal management
• Designed for high-efficiency power conversion applications

Applications

• Solar inverters
• Uninterruptible power supplies (UPS)
• Industrial motor drives

Procurement Notes

Verify the specific suffix 'STG' against official datasheets to confirm exact pinout and terminal plating specifications. Ensure compatibility with existing gate driver requirements and thermal interface materials. Confirm RoHS compliance status through manufacturer documentation before integration into regulated equipment designs.

Selection Notes

Select this module for applications requiring 1200V blocking capability and 200A current handling in a compact form factor. Evaluate thermal resistance values against system heat sink capabilities. Consider the saturation voltage impact on overall system efficiency during conduction phases compared to alternative technologies.

Part Context

This component is part of onsemi's EliteSiC portfolio, which combines silicon IGBTs with silicon carbide diodes. The NXH200T120H3Q2F2STG shares the Q2PACK-200A footprint with other modules in the NXH200T120H3Q2 series, facilitating design reuse across different current or voltage variants within the same family.

Replacement Considerations

NXH200T120H3Q2F2SG is a verified substitute within the same series. Verify pin-to-pin compatibility and identical electrical ratings before substitution.