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The NXPS20H110C is a dual common cathode power Schottky diode designed for high-frequency switched mode power supplies. It features a repetitive peak reverse voltage of 110 V and an average forward current rating of 10 A per diode, with a total output current of 20 A when both diodes conduct. The device supports a maximum junction temperature of 175 °C and utilizes a TO-220AB (SOT78) plastic package.
Verify the specific ordering suffix and package variant against the manufacturer's current catalog before procurement. Confirm that the component meets all required thermal and electrical specifications for the intended application environment. Ensure compliance with relevant safety standards and automotive qualification requirements if applicable to the end product design.
Select this component for applications requiring high-frequency rectification with minimal switching losses. Consider the 175 °C junction temperature rating for high-thermal environments. Evaluate the TO-220AB package for adequate heat dissipation capabilities relative to the expected load currents and ambient conditions in the final assembly.
This component belongs to the WeEn Semiconductors (formerly NXP) power Schottky diode family. It is engineered specifically for efficient power conversion in demanding electronic systems. The dual common cathode configuration allows for versatile circuit topologies while maintaining compact physical dimensions within the standard TO-220AB housing.
Consult official substitution lists for electrically equivalent dual Schottky diodes with matching voltage and current ratings. Verify pinout compatibility and thermal resistance characteristics to ensure seamless integration without redesigning the printed circuit board layout or heatsinking infrastructure.
The maximum junction temperature is 175 °C.
The device contains two diodes arranged in a common cathode configuration.
It uses a TO-220AB plastic single-ended package, also known as SOT78.