NXV08V110DB1

Power Driver Modules Overview

The NXV08V110DB1 is an automotive power MOSFET module designed for three-phase inverter bridges. It integrates six N-channel MOSFETs, a current sensing resistor, an NTC thermistor, and an RC snubber network within a single APM19-CBC package. The device supports variable speed motor drives with a drain-to-source voltage of 80 V and a maximum junction temperature of 175 °C. Key electrical parameters include a typical RDS(on) of 1.3 mΩ for high-side MOSFETs and a total loop resistance of 4.9 mΩ at 80 A. It features electrically isolated DBC substrate technology for low thermal resistance.

Power Driver Modules Feature Summary

• Integrates a complete three-phase inverter bridge with built-in current sensing and temperature monitoring capabilities.
• Includes an internal RC snubber circuit to minimize electromagnetic interference (EMI).
• Utilizes an electrically isolated Direct Bonded Copper (DBC) substrate to ensure low thermal resistance between the junction and heat sink.
• Features full module serialization to enable comprehensive traceability throughout the supply chain.

Power Driver Modules Applications

• 24 V and 48 V motor control systems
• DC-DC converters
• Variable speed motor drive applications

Power Driver Modules Procurement Notes

Verify that the specific ordering suffix matches the required packing method and operating temperature range. Confirm compliance with RoHS directives and UL94-V0 flammability ratings. Ensure the procurement channel provides valid documentation regarding AEC-Q100 qualification status and PPAP capability requirements for automotive integration.

Power Driver Modules Selection Notes

Select this component when designing compact, efficient motor control systems requiring integrated sensing and protection. Evaluate the thermal characteristics against the application's heat dissipation needs. Consider the 80 V rating and current handling capabilities relative to the system's peak load requirements.

Power Driver Modules Part Context

This part belongs to onsemi's automotive power MOSFET module portfolio. It is specifically engineered to reduce vehicle fuel consumption and CO2 emissions by enabling smaller, more reliable electronic systems. The module simplifies vehicle assembly through its integrated design and direct mounting capabilities.

Power Driver Modules Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

Power Driver Modules FAQ

What components are integrated inside the NXV08V110DB1 module?

The module integrates six N-channel MOSFETs, a 1.0 Ω resistor, a 10 kΩ NTC thermistor, a 0.5 mΩ current sensing resistor, and an RC snubber network.

How does the NXV08V110DB1 handle thermal management?

It uses an electrically isolated DBC substrate to provide low thermal resistance from the junction to the case, allowing for direct mounting via thermal interface material to a heat sink.

Is the NXV08V110DB1 suitable for harsh automotive environments?

Yes, it is AEC qualified according to AQG324 standards and operates within a temperature range of -40 °C to 125 °C.