— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:HIGH POWER CHIP ATTENUATOR, 6DB,
- Series:PAT
- Mfr:Susumu
- Package:Tape & Reel (TR),Cut Tape (CT)
- Attenuation Value:6dB
- Frequency Range:0 Hz ~ 6 GHz
- Power (Watts):5W
- Impedance:50 Ohms
- Grade:-
- Qualification:-
- Package / Case:2-SMD, No Lead
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Overview
The PAT3060H-C-6DB-T1 is a high-power chip attenuator manufactured by Susumu, designed for RF applications. It provides a fixed attenuation value of 6 dB with a nominal impedance of 50 Ohms. The component supports a maximum power handling capacity of 5 Watts and operates effectively from DC up to 6 GHz. Constructed using silicon technology, it is housed in a compact 2412 surface-mount package. This device is part of the PAT series, offering reliable signal reduction capabilities within specified electrical limits.
Feature Summary
- Provides fixed 6 dB signal attenuation for RF circuits
- Supports high power handling up to 5 Watts
- Operates across a frequency range from DC to 6 GHz
- Utilizes silicon-based construction for durability
Applications
- RF signal level adjustment in wireless communication systems
- Attenuation in test and measurement equipment
- Signal conditioning in microwave circuit designs
Procurement Notes
Verify the manufacturer part number PAT3060H-C-6DB-T1 against official Susumu documentation to ensure authenticity. Confirm that the specific suffix matches the required 6 dB attenuation value and 2412 package size. Check RoHS compliance status via the manufacturer's environmental files before integration into regulated products.
Selection Notes
Select this component when a fixed 6 dB attenuation is required at 50 Ohms impedance. Ensure the application does not exceed the 5 Watt power rating or the 6 GHz frequency limit. Consider the 2412 package dimensions for PCB layout compatibility and verify thermal management requirements for continuous high-power operation.
Part Context
This component belongs to the PAT series of high-power chip attenuators from Susumu. The series utilizes silicon technology to deliver robust performance in RF environments. Similar models in the family offer different attenuation values while maintaining consistent power handling and frequency specifications.
Replacement Considerations
Consult official datasheets for cross-reference information. No direct substitute part numbers are confirmed in the provided public documentation.
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