PBLS1501V,115

Overview

The PBLS1501V is a low VCEsat PNP transistor and NPN resistor-equipped transistor integrated into a single SOT666 plastic surface-mounted package. It functions as a 15 V loadswitch with a maximum collector-emitter voltage of -15 V for the PNP section and 50 V for the NPN section. The device supports a DC collector current of -500 mA for the PNP transistor and 100 mA for the NPN output. Key electrical parameters include an equivalent on-resistance (RCEsat) of up to 500 mΩ at -500 mA, a bias resistor (R1) ranging from 1.54 kΩ to 2.86 kΩ, and a total power dissipation limit of 300 mW per device.

Feature Summary

• Combines a low VCEsat Breakthrough in Small Signal (BISS) PNP transistor with an NPN resistor-equipped transistor in one compact package.
• Features a low threshold voltage below 1 V compared to MOSFETs, requiring minimal drive power.
• Provides a space-saving solution that reduces overall component count on the printed circuit board.

Applications

• Supply line switches
• Battery charger switches
• High-side switches for LEDs, drivers and backlights
• Portable equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packing quantity and tape-and-reel specifications. Confirm the marking code 'C1' matches the intended production batch. Check the most recent product status data sheet to confirm availability and any potential changes to legal definitions or disclaimers before finalizing procurement orders.

Selection Notes

Select the PBLS1501V when a combined PNP loadswitch and NPN driver is required in a small footprint. Ensure the application voltage does not exceed the -15 V collector-emitter rating for the PNP section. Verify that the thermal resistance of 416 K/W in free air is acceptable for the expected ambient temperature and power dissipation levels in the target design environment.

Part Context

This component belongs to Nexperia's portfolio of low VCEsat transistors designed for efficient switching applications. It serves as an alternative to discrete component arrangements, offering reduced PCB area and pick-and-place costs. The SOT666 package variant provides a compact surface-mount option compared to the standard SC-88 package used in the PBLS1501Y counterpart.

Replacement Considerations

The PBLS1501Y is the primary functional substitute, sharing identical electrical characteristics but utilizing the SOT363 (SC-88) package instead of the SOT666. Designers must verify pinout compatibility and physical footprint differences when substituting between these two package types.

FAQ

What is the function of the NPN section in the PBLS1501V?

The NPN section acts as a resistor-equipped transistor (RET) with an integrated bias resistor (R1), providing a low-threshold switch interface that requires less drive power than comparable MOSFETs.

What is the maximum power dissipation for the PBLS1501V?

The total power dissipation per device is limited to 300 mW, with a junction temperature maximum of 150 °C and an ambient temperature range of -65 °C to +150 °C.

How does the PBLS1501V differ from the PBLS1501Y?

The primary difference is the package type; the PBLS1501V uses the SOT666 package, while the PBLS1501Y uses the SOT363 (SC-88) package. Both share the same internal circuitry and electrical specifications.