ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：NEXPERIA PBLS1501V - 15 V PNP BI
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Bulk
- Transistor Type：1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max)：100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)：50V, 15V
- Resistor - Base (R1)：2.2kOhms
- Resistor - Emitter Base (R2)：2.2kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 20mA, 5V / 150 @ 100mA, 2V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：1µA, 100nA
- Frequency - Transition：280MHz
- Power - Max：300mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
Download product information
Overview
The PBLS1501Y,115 is a dual-transistor load switch in an SOT363 (SC-88) package. It integrates a low VCEsat PNP transistor (TR1) and an NPN resistor-equipped transistor (TR2). TR1 supports a collector-emitter voltage of -15 V and DC current up to -500 mA with typical on-resistance of 300 mΩ. TR2 provides a collector-emitter voltage of 50 V and output current up to 100 mA, featuring a bias resistor R1 of 2.2 kΩ. The device operates within an ambient temperature range of -55 °C to +150 °C.
Feature Summary
- Combines a low saturation voltage PNP BISS transistor and an NPN resistor-equipped transistor in a single compact package.
- Offers a space-saving solution that reduces component count by integrating the bias resistor directly into the NPN transistor structure.
- Requires low drive power due to a low threshold voltage compared to MOSFETs.
Applications
- Supply line switches
- Battery charger switches
- High-side switches for LEDs, drivers and backlights
- Portable equipment
Procurement Notes
Verify the specific ordering suffix matches the required packing method. The PBLS1501Y variant utilizes the SOT363 package. Confirm the marking code corresponds to the manufacturing origin. Ensure the data sheet revision aligns with current design requirements before finalizing procurement specifications.
Selection Notes
Select this component when a combined high-side PNP switch and controlled NPN load switch are needed in minimal PCB area. The integrated bias resistor simplifies the drive circuit for the NPN section. Verify that the -15 V rating for the PNP section meets the supply line requirements and that the 50 V rating for the NPN section is sufficient for the intended load voltage.
Part Context
This part belongs to the PBLS1501 series, which includes the PBLS1501V variant housed in an SOT666 package. Both variants share identical electrical characteristics but differ in physical footprint. The PBLS1501Y specifically denotes the SC-88 plastic surface-mounted package configuration.
Replacement Considerations
The PBLS1501V serves as a pin-compatible alternative with a different package outline (SOT666). No other direct substitutes are documented in the provided datasheet.
FAQ
What is the function of the internal resistor in the PBLS1501Y?
The internal resistor (R1) is connected to the base of the NPN transistor (TR2), eliminating the need for an external bias resistor and reducing the overall component count.
How does the PBLS1501Y compare to MOSFETs regarding drive voltage?
The device features a low threshold voltage of less than 1 V, requiring lower drive power compared to standard MOSFETs.
What is the maximum DC collector current for the PNP transistor section?
The maximum DC collector current for the PNP transistor (TR1) is -500 mA.
