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Product Detailed Parameters
- Description：TRANS NPN PREBIAS/PNP 1.5W 8SO
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Bulk
- Transistor Type：1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max)：100mA, 3A
- Voltage - Collector Emitter Breakdown (Max)：50V, 20V
- Resistor - Base (R1)：2.2kOhms
- Resistor - Emitter Base (R2)：2.2kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 20mA, 5V / 150 @ 2A, 2V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：1µA, 100nA
- Frequency - Transition：100MHz
- Power - Max：1.5W
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
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Overview
The PBLS2001S is a dual transistor array in an SOT96-1 (SO8) package, combining a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and an NPN Resistor-Equipped Transistor (RET). The PNP section supports a collector current of -3 A with a maximum collector-emitter voltage of -20 V. Its saturation resistance is typically 75 mΩ at -2 A. The NPN section features a 2.2 kΩ bias resistor, supporting a 100 mA output current and a 50 V collector-emitter voltage.
Feature Summary
- Integrates a low saturation voltage BISS transistor and a resistor-equipped transistor within a single compact surface-mount package to reduce component count.
- Offers a low threshold voltage compared to MOSFETs, requiring minimal drive power for switching operations.
- Provides a space-saving solution suitable for portable equipment and high-side switching applications.
Applications
- Supply line switches
- Battery charger switches
- High-side switches for LEDs, drivers, and backlights
- Portable equipment
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as tape and reel specifications. Ensure the source document matches the exact part number PBLS2001S to avoid discrepancies in pin configuration or electrical characteristics. Cross-reference marking codes LS2001S for identification during inspection.
Selection Notes
Select this component when a combined load switch and driver function is required in a limited board area. The PNP BISS transistor is suitable for high-current switching with low loss, while the integrated NPN RET simplifies base drive circuits by eliminating external biasing resistors. Verify thermal dissipation requirements based on the specific PCB footprint used.
Part Context
This device belongs to the BISS and RET transistor families from NXP Semiconductors, now managed by Nexperia. It replaces older discrete solutions by integrating two distinct transistor functions into one SOT96-1 package. The product profile emphasizes efficiency in portable and battery-powered systems where space and power consumption are critical constraints.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Generic replacements may not match the specific low VCEsat characteristics of the BISS transistor or the precise bias resistor tolerance of the RET section.
FAQ
What is the typical saturation resistance of the PNP transistor?
The typical collector-emitter saturation resistance (RCEsat) is 75 mΩ when the collector current is -2 A and the base current is -200 mA.
What is the value of the bias resistor in the NPN section?
The nominal value of the bias resistor (R1) is 2.2 kΩ, with a specified range between 1.54 kΩ and 2.86 kΩ.
What is the maximum collector current for the PNP transistor?
The maximum continuous collector current (IC) for the PNP BISS transistor is -3 A.
