PBLS2002D,115

Overview

The PBLS2002D,115 is a dual transistor in a SOT457 (SC-74) package, combining a PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and an NPN Resistor-Equipped Transistor (RET). The PNP section supports a collector current of -1 A with a collector-emitter voltage of -20 V. The NPN RET section features a bias resistor of 4.7 kΩ typical value and handles up to 100 mA output current at 50 V collector-emitter voltage. Total power dissipation reaches 400 mW per device under standard conditions.

Feature Summary

• Integrates a low saturation voltage PNP BISS transistor and an NPN resistor-equipped transistor within a single compact surface-mounted package.
• Offers a space-saving solution that reduces component count by replacing discrete components with a unified dual-transistor structure.
• Requires low drive power due to a threshold voltage below 1 V, providing an efficient alternative to MOSFET-based switching solutions.

Applications

• Supply line switches
• Battery charger switches
• High-side switches for LEDs, drivers and backlights
• Portable equipment

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when design constraints require minimizing board space and reducing bill-of-materials complexity. It is suitable for applications needing both high-current switching capability via the PNP BISS transistor and controlled logic-level switching via the integrated NPN RET. Ensure thermal management accounts for the specified junction-to-ambient resistance values on the chosen PCB footprint.

Part Context

This device belongs to Nexperia's loadswitch portfolio, designed to replace multiple discrete transistors and resistors. It utilizes the BISS technology for the PNP element to achieve superior saturation characteristics compared to standard small-signal transistors, while the RET simplifies gate or base drive requirements for the NPN side.

Replacement Considerations

Direct pin-compatible replacements may include other SC-74 dual transistors from various manufacturers, but electrical parameters such as VCEsat and bias resistor tolerance must be verified against the original datasheet specifications to ensure circuit compatibility.

FAQ

What is the function of the internal resistor in the NPN section?

The NPN section includes an integrated bias resistor (R1) connected to the base. This eliminates the need for an external base resistor, simplifying the circuit design and reducing the overall component count for switching applications.

How does the BISS technology benefit the PNP transistor?

Breakthrough in Small Signal (BISS) technology allows the PNP transistor to achieve a very low collector-emitter saturation voltage (VCEsat). This minimizes power loss and heat generation during conduction, making it more efficient than standard PNP transistors for load switching.

What is the maximum peak collector current for the PNP transistor?

According to the limiting values, the peak collector current (ICM) for the PNP transistor is -2 A, provided the pulse width is less than or equal to 300 μs.