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The PBLS2004D is a dual-transistor component in a SOT457 (SC-74) package, integrating a PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and an NPN Resistor-Equipped Transistor (RET). The PNP section supports a collector-emitter voltage of -20 V and a DC collector current of -1 A, with a saturation resistance of 185 mΩ at -1 A. The NPN section features a collector-emitter voltage of 50 V, an output current of 100 mA, and an integrated bias resistor of 22 kΩ. It operates within an ambient temperature range of -65 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packing methods and tape-and-reel specifications. Ensure the procurement channel provides valid traceability for the SOT457 package variant. Cross-reference the marking code F9 with the datasheet to authenticate the component origin before finalizing acquisition.
Select this component when a combined high-side switching solution and a biased transistor interface are required in a minimal footprint. The PNP BISS technology is suitable for applications demanding low saturation voltage under high current loads. The integrated NPN resistor simplifies biasing networks, reducing external passive components and board space requirements.
This device belongs to Nexperia's portfolio of small signal transistors utilizing Breakthrough in Small Signal (BISS) technology. It replaces discrete component arrangements by integrating two distinct transistor functions into one SOT457 package. The product maintains backward compatibility with previous Philips Semiconductors designs while offering improved thermal and electrical performance characteristics.
Check for direct replacements within the PBLS series or equivalent BISS transistor combinations from other manufacturers. Verify pinout compatibility and saturation voltage specifications to ensure seamless integration without redesigning the surrounding circuitry.