PBLS2024D115

Overview

The PBLS2024D is a dual transistor component featuring a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and an NPN Resistor-Equipped Transistor (RET) within a single SOT457 (SC-74) package. The PNP section operates with a collector-emitter voltage of -20 V and a continuous collector current of -1.8 A, achieving a typical saturation resistance of 78 mΩ at -1.8 A. The NPN RET section provides a 50 V collector-emitter voltage rating and includes an integrated bias resistor of 22 kΩ nominal value. This configuration enables efficient load switching in compact designs.

Feature Summary

• Combines a low saturation voltage PNP BISS transistor with an NPN resistor-equipped transistor in one space-saving package
• Features a low threshold voltage compared to MOSFETs for simplified drive requirements
• Reduces overall component count by integrating discrete functions into a single surface-mount device
• Qualified according to AEC-Q101 standards for automotive reliability

Applications

• Supply line switches
• Battery charger switches
• High-side switches for LEDs, drivers and backlights
• Portable equipment

Procurement Notes

Verify the specific ordering suffix when sourcing components, as packing methods such as tape and reel configurations may vary. Confirm the most recent product status directly with the manufacturer or authorized distributors, as specifications and availability are subject to change without notice. Ensure compliance with RoHS directives and check for any export control regulations applicable to the region of import before finalizing procurement plans.

Selection Notes

Select this component when space constraints require combining a high-current PNP switch with a logic-level NPN driver. The integrated bias resistor simplifies circuit design by eliminating external resistors for the NPN section. Verify that the required collector current does not exceed 1.8 A for the PNP side and 100 mA for the NPN side. Ensure the operating temperature range aligns with the specified -55 °C to +150 °C ambient limits for the intended application environment.

Part Context

This device belongs to NXP's portfolio of small signal transistors designed for power management and switching applications. It utilizes Breakthrough In Small Signal technology to minimize voltage drop across the PNP transistor, improving efficiency in battery-powered systems. The integration with an NPN RET allows for direct interfacing with logic outputs, streamlining the design of high-side switches for various loads.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official replacement guides or contact NXP Semiconductors sales offices for qualified alternatives that match the SOT457 package and electrical characteristics.