SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PBLS4002D,115 is a dual digital transistor in a SOT457 (SC-74) package. It integrates a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and an NPN Resistor-Equipped Transistor (RET). The PNP device supports a collector-emitter voltage of -40 V and continuous current up to 1 A. The NPN RET features a 50 V collector-emitter voltage, 100 mA output current, and a typical bias resistor of 4.7 kΩ. Total power dissipation reaches 400 mW at 25 °C on FR4 PCBs.
Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packing methods and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or Nexperia sales offices prior to finalizing procurement orders.
Select this component when circuit design requires both a high-current load switch and a logic-level switching transistor within limited board area. Ensure the required collector currents and voltage ratings align with the PNP (-40 V, 1 A) and NPN (50 V, 100 mA) limits defined in the datasheet.
This part belongs to the Nexperia PBLS series of pre-biased digital transistors. These devices are designed to simplify circuit design by integrating internal base resistors, eliminating the need for external components typically required for bipolar junction transistor biasing in digital switching applications.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters before considering alternative manufacturers' equivalents.