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The PBLS4002Y-Q is a dual-transistor array in a SOT363 (TSSOP6) package, containing one PNP low VCEsat transistor and one NPN Resistor-Equipped Transistor (RET). The PNP section supports a collector-emitter voltage of -40 V with a limiting current of -500 mA. The NPN section operates at 50 V with a maximum output current of 100 mA and includes an integrated bias resistor R1 of 4.7 kΩ. Total power dissipation is rated at 300 mW, with a junction temperature limit of 150 °C.
Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging and marking codes. Confirm that the AEC-Q101 qualification status meets the specific environmental requirements of the target application before finalizing procurement orders.
Select this component when space constraints require combining switching and biasing functions. Ensure the required collector current does not exceed 500 mA for the PNP side or 100 mA for the NPN side. Verify that the system voltage remains within the -40 V and 50 V limits respectively to maintain safe operation.
This device belongs to Nexperia's portfolio of pre-biased transistor arrays designed for loadswitch applications. It serves as a compact alternative to discrete transistor and resistor combinations, specifically targeting automotive and portable electronics where board real estate and assembly complexity are critical design factors.
Check pinout compatibility with existing designs. Verify that any substitute part matches the SOT363 footprint and maintains similar VCEsat and breakdown voltage ratings for both the PNP and NPN sections to ensure circuit functionality.
The typical value for the bias resistor R1 is 4.7 kΩ, with a range from 3.3 kΩ to 6.1 kΩ.
Yes, the PBLS4002Y-Q is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.
The maximum total power dissipation for the device is 300 mW.