PBLS4002Y,115

PBLS4002Y,115

  • Description:TRANS PREBIAS 1NPN 1PNP 6TSSOP
  • Series:-

SKU:24384c31b36f Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS 1NPN 1PNP 6TSSOP
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max):100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max):50V, 40V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V / 150 @ 100mA, 2V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):1µA
  • Frequency - Transition:300MHz
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP

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PBLS4002Y,115

Overview

The PBLS4002Y,115 is a dual transistor array in a TSSOP6 (SOT363) package containing one PNP low VCEsat loadswitch transistor and one NPN resistor-equipped transistor (RET). The PNP section supports a collector-emitter voltage of -40 V and a limiting current of 500 mA with a typical saturation resistance of 440 mΩ. The NPN section provides a collector-emitter voltage of 50 V, an output current of 100 mA, and an integrated bias resistor R1 of 4.7 kΩ. Total power dissipation is rated at 300 mW.

Feature Summary

  • Combines a low VCEsat PNP transistor and an NPN RET in a single compact SMD package to reduce component count.
  • Features a low threshold voltage below 1 V for the NPN section compared to MOSFETs, requiring minimal drive power.
  • Includes an integrated bias resistor network within the NPN transistor structure.

Applications

  • Supply line switches
  • Battery charger switches
  • High-side switches for LEDs, drivers, and backlights
  • Portable equipment

Procurement Notes

Verify the specific ordering suffix matches the required packaging format before purchase. Confirm that the non-automotive qualification status aligns with the target application requirements. Ensure the design accounts for the specified thermal resistance and power dissipation limits under actual operating conditions.

Selection Notes

Select this component when space constraints require integrating both switching and biasing functions. The PNP transistor is suitable for high-current load switching, while the NPN RET simplifies base drive circuits. Verify that the 4.7 kΩ internal resistor value meets the specific logic interface requirements of the control circuit.

Part Context

This device belongs to the Nexperia PBLS4002 family of pre-biased transistor arrays. It utilizes the SOT363 surface-mount package to provide a space-saving solution for portable electronics. The product data sheet indicates it is not automotive qualified.

Replacement Considerations

Check for alternative part numbers within the PBLS4002 series or other Nexperia dual transistor arrays if pin compatibility or electrical parameters differ from system requirements.

FAQ

What is the function of the NPN transistor in this array?

The NPN transistor is a Resistor-Equipped Transistor (RET) featuring an integrated bias resistor R1 of 4.7 kΩ to simplify drive circuitry.

Is the PBLS4002Y suitable for automotive applications?

No, the product data sheet explicitly states that this specific product is not automotive qualified.

What is the maximum collector current for the PNP transistor?

The limiting collector current (IClim) for the PNP transistor is -500 mA.

PBLS4002Y,115PBLS4002Y,115

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