PBLS4004D,115

Overview

The PBLS4004D,115 is a dual digital transistor in an SOT457 (SC-74) TSOP-6 package. It integrates a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and an NPN Resistor-Equipped Transistor (RET). The PNP section supports a collector current of up to 1 A with a collector-emitter voltage of -40 V. The NPN section provides a collector-emitter voltage of 50 V and an output current of 100 mA, featuring a typical bias resistor of 22 kΩ.

Feature Summary

• Combines a low saturation voltage BISS transistor and a resistor-equipped transistor in one space-saving package.
• Offers low threshold voltage compared to MOSFETs, requiring minimal drive power.
• Reduces component count by integrating internal bias resistors.

Applications

• Supply line switches
• Battery charger switches
• High-side switches for LEDs, drivers, and backlights
• Portable equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current product status documentation. Confirm RoHS compliance details and check for any discontinuation notices or end-of-life declarations prior to finalizing design-in decisions. Ensure the selected packing method matches the required tape and reel specifications for automated assembly processes.

Selection Notes

Select this component when space constraints require combining switching and logic functions. The PNP BISS transistor is suitable for high-current load switching applications due to its low saturation resistance. The integrated NPN RET simplifies interface circuits by eliminating external base resistors, reducing board area and assembly complexity.

Part Context

This device belongs to Nexperia's portfolio of digital transistors designed for surface-mount applications. It utilizes the SC-74 plastic package to provide a compact solution for modern electronic designs. The integration of distinct PNP and NPN functionalities within a single six-lead outline allows for versatile circuit configurations in signal conditioning and power management roles.

Replacement Considerations

Check for direct pin-compatible alternatives within the same SC-74 footprint that offer similar electrical characteristics. Verify that any substitute maintains the required VCEsat levels for the PNP section and the bias resistor tolerance for the NPN section to ensure circuit performance parity.

FAQ

What is the function of the internal resistors in the NPN section?

The NPN section includes an integrated bias resistor (R1) connected to the base. This eliminates the need for external resistors, simplifying the circuit design and reducing the overall component count on the printed circuit board.

How does the PNP transistor achieve low saturation voltage?

The PNP transistor utilizes Breakthrough In Small Signal (BISS) technology. This design minimizes the collector-emitter saturation voltage (VCEsat), allowing for efficient switching with lower power loss even at higher collector currents.

What is the maximum peak collector current for the PNP section?

According to the limiting values, the PNP section can withstand a peak collector current (ICM) of -2 A for single pulses with a duration of tp ≤ 1 ms.