SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PBLS4004V,115 is a dual digital transistor in an SOT666 package, integrating one PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and one NPN Resistor-Equipped Transistor (RET). The PNP section supports a collector-emitter voltage of -40 V and continuous current up to -500 mA with a typical saturation resistance of 440 mΩ. The NPN section handles 50 V and 100 mA output current, featuring a 22 kΩ bias resistor. Total power dissipation is 300 mW, operating between -65 °C and +150 °C.
Verify the specific ordering suffix against the manufacturer's current database to confirm availability and packaging details. Confirm that the SOT666 package variant matches the design footprint requirements. Check for any recent Product Change Notifications regarding material or assembly updates before finalizing procurement plans.
Select this component when a compact solution is required for load switching applications. The PNP BISS transistor is suitable for high-current switching with low saturation voltage. The integrated NPN RET simplifies driver interface circuits by eliminating external base resistors. Ensure thermal management accommodates the 300 mW total power dissipation limit.
This device belongs to the PBLS4004 series from Nexperia, formerly NXP Standard Products. It is designed as a complementary pair in a single surface-mount package. The series includes variants like the PBLS4004Y in an SOT363 package, offering similar electrical characteristics with different physical dimensions for diverse board layout constraints.
The PBLS4004Y serves as a pin-compatible alternative within the same family, differing primarily in the SOT363 package instead of SOT666. Verify mechanical fit and thermal performance differences when substituting.