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Product Detailed Parameters
- Description：TRANS NPN PREBIAS/PNP SOT666
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Transistor Type：1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max)：100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)：50V, 40V
- Resistor - Base (R1)：47kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 5V / 150 @ 100mA, 2V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：1µA
- Frequency - Transition：300MHz
- Power - Max：300mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-666
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Overview
The PBLS4005V,115 is a dual digital transistor in an SOT666 package, integrating a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and an NPN Resistor-Equipped Transistor (RET). The PNP section supports a collector-emitter voltage of -40 V and a continuous current of -500 mA with a typical saturation resistance of 440 mΩ. The NPN section handles 50 V and 100 mA output current, featuring a 47 kΩ bias resistor. Total power dissipation is 300 mW at 25 °C, with an operating temperature range from -65 °C to +150 °C.
Feature Summary
- Combines a low VCEsat BISS transistor and an NPN RET in a single space-saving package.
- Offers low threshold voltage compared to MOSFETs for reduced drive power requirements.
- Reduces component count through integrated biasing and switching capabilities.
Applications
- Supply line switches
- Battery charger switches
- High-side switches for LEDs, drivers, and backlights
- Portable equipment
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm the exact packing method and reel specifications. Confirm that the SOT666 package variant matches the design footprint requirements. Ensure compliance with RoHS directives as stated in the product data sheet before finalizing procurement orders.
Selection Notes
Select this component when a compact solution is required for load switching applications involving both high-side and low-side control. The integrated PNP BISS transistor provides low saturation voltage for efficient power handling, while the NPN RET simplifies interface logic. Verify thermal constraints and PCB footprint compatibility with the SOT666 outline before implementation.
Part Context
This device belongs to the PBLS4005 series, which includes the PBLS4005Y variant housed in an SOT363 package. Both parts share identical electrical characteristics but differ in physical packaging dimensions. The PBLS4005V specifically utilizes the SOT666 plastic surface-mounted package for integration into space-constrained designs.
Replacement Considerations
The PBLS4005Y serves as a functional equivalent within the same series, differing only by the SOT363 package instead of SOT666. Verify mechanical fit and pin alignment before substitution. No other direct substitutes are documented in the provided datasheet.
FAQ
What is the difference between the PBLS4005Y and PBLS4005V?
The primary difference is the package type. The PBLS4005Y uses an SOT363 (SC-88) package, while the PBLS4005V uses an SOT666 package. Electrical specifications remain identical.
What is the typical saturation resistance of the PNP transistor?
The typical collector-emitter saturation resistance (RCEsat) for the PNP transistor is 440 mΩ at IC = -500 mA and IB = -50 mA.
What is the value of the bias resistor in the NPN section?
The typical value for the bias resistor R1 in the NPN resistor-equipped transistor section is 47 kΩ.
