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The PBLS4005Y-Q is a dual transistor array in a TSSOP6 (SOT363) package, containing one PNP low VCEsat transistor and one NPN Resistor-Equipped Transistor (RET). The PNP section supports a collector current of -500 mA with a collector-emitter voltage of -40 V. The NPN RET section provides an output current of 100 mA and a collector-emitter voltage of 50 V, featuring an integrated input bias resistor (R1) of 47 kΩ typical value. Total power dissipation is rated at 300 mW.
Verify the specific ordering suffix matches the required tape-and-reel or cut-tape configuration before purchase. Confirm that the component meets the AEC-Q101 qualification requirements for your target automotive application. Ensure the design accounts for the 300 mW total power dissipation limit under expected ambient temperature conditions.
Select this component when space constraints require integrating both switching and biasing functions into one footprint. The PNP device is optimized for high-current load switching, while the NPN RET simplifies circuit design by eliminating external base resistors. Verify that the 47 kΩ internal bias resistor aligns with the control logic voltage levels and switching speed requirements.
This part belongs to Nexperia's PBLS series of pre-biased double transistors. It utilizes the SOT363 plastic surface-mounted package, which offers a small footprint of 2.1 mm x 1.25 mm. The marking code for this device is 'S5%' where '%' represents the manufacturing site code.
Check for direct equivalents within the PBLS4005 family from Nexperia. Verify pinout compatibility if substituting with other dual transistor arrays. Ensure replacement parts meet the same AEC-Q101 automotive qualification if used in vehicle systems.
The typical value for the input bias resistor R1 is 47 kΩ, with a range between 33 kΩ and 61 kΩ.
Yes, the PBLS4005Y-Q is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.
The maximum collector current (IC) for the PNP low VCEsat transistor is -500 mA.