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The PBLS6002D-QX is a dual NPN/PNP bipolar junction transistor (BJT) in an SOT363 surface-mount package. It features a continuous collector current of 100 mA and a collector-emitter voltage rating of 50 V for both polarities. The device operates within a temperature range of -55 °C to +150 °C and includes an integrated ESD protection structure rated at 8 kV HBM. Designed for high-density applications, it offers low saturation voltages and fast switching characteristics suitable for portable electronics.
Verify the specific suffix against official Nexperia documentation to confirm exact binning or tape-and-reel specifications. Ensure the component meets required automotive grade certifications if deployed in vehicle systems. Cross-reference datasheet revisions to validate parameter consistency before finalizing procurement orders.
Select this component when space constraints require dual polarity switching in a minimal footprint. Verify that the 50 V voltage rating exceeds peak circuit transients. Confirm thermal management capabilities align with the 150 °C maximum junction temperature limit under expected load conditions.
This part belongs to Nexperia’s PBLS series of dual bipolar transistors designed for high-density PCB layouts. The series integrates complementary NPN and PNP structures to reduce assembly steps and board area compared to discrete components.
Consult official Nexperia substitution guides for verified equivalents. Generic replacements may lack identical ESD ratings or AEC-Q101 qualification status.