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The PBLS6002D,115 is a dual transistor in a single SOT457 (SC-74) TSOP6 package. It integrates a PNP low VCEsat transistor and an NPN Resistor-Equipped Transistor (RET). The PNP section supports a collector current of 1 A with a maximum collector-emitter voltage of -60 V. The NPN RET section handles up to 100 mA output current at 50 V. Key electrical parameters include a typical bias resistor R1 of 4.7 kΩ and a saturation resistance for the PNP transistor of 255 mΩ at 1 A.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the non-automotive qualification status aligns with the target application requirements, as automotive-grade alternatives may be necessary for regulated environments.
Select this component when a mixed PNP/NPN configuration is required within a limited footprint. Ensure the design accounts for the distinct voltage ratings: 60 V for the PNP side and 50 V for the NPN side. Verify thermal management capabilities based on the specified power dissipation limits under expected ambient conditions.
This device belongs to Nexperia's loadswitch double transistor portfolio. It serves as a discrete alternative to integrated load switch ICs, offering flexibility for custom threshold and current settings while maintaining a small SC-74 form factor suitable for dense PCB layouts.
Check for the PBLS6003D series for similar dual transistor configurations with potentially different voltage or current ratings. Verify pin compatibility and electrical characteristics before substituting any other dual transistor packages.