PBLS6024D,115

Overview

The PBLS6024D is a PNP load switch integrating a low VCEsat PNP transistor and an NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) TSOP6 package. The PNP section supports a collector-emitter voltage of -60 V and continuous collector current of -1.5 A, with a typical saturation resistance of 110 mΩ at IC = -1.5 A and IB = -100 mA. The integrated NPN RET provides a bias resistor R1 of 22 kΩ (typical) for simplified drive control. This dual-component solution reduces board space and component count while maintaining AEC-Q101 qualification for automotive reliability.

Feature Summary

• Combines a low VCEsat PNP transistor with an NPN resistor-equipped transistor in a single compact package
• Features a low threshold voltage below 1 V compared to MOSFET alternatives
• Reduces overall component count and saves valuable PCB space
• Qualified according to AEC-Q101 standards for automotive applications

Applications

• Supply line switches
• Battery charger switches
• High-side switches for LEDs, drivers, and backlights
• Portable equipment power management

Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel configuration. Confirm that the SOT457 package dimensions align with the target PCB footprint. Ensure design margins account for the thermal resistance values provided in the datasheet under expected ambient conditions. Cross-reference the marking code KH to confirm authenticity upon receipt.

Selection Notes

Select this component when space constraints require combining switching and biasing functions. The low VCEsat characteristic makes it suitable for high-efficiency power paths where voltage drop minimization is critical. Verify that the base drive current capabilities of the controlling circuit can supply the necessary IB to achieve the specified saturation resistance levels under maximum load conditions.

Part Context

This device belongs to Nexperia's portfolio of integrated load switches designed to simplify power distribution architectures. By embedding the bias resistor directly into the NPN transistor structure, it eliminates external components typically required for level shifting or base driving in discrete PNP configurations. It serves as a direct replacement for separate PNP transistors paired with external resistors in space-sensitive designs.

Replacement Considerations

Direct pin-compatible replacements within the same family should be verified against the specific VCEO and IC ratings. Ensure any substitute maintains the AEC-Q101 qualification if used in automotive contexts. Check that the alternative device offers comparable RCEsat performance to maintain efficiency targets.