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The PBSS2515VS,315 is an NPN low VCEsat double transistor manufactured by Nexperia in a SOT666 ultra-small and flat lead Surface-Mounted Device plastic package. It features a collector-emitter voltage (VCEO) of 15 V and a continuous collector current (IC) of 500 mA per transistor. The device offers a minimum DC current gain (hFE) of 200 at IC = 10 mA. Total power dissipation is rated at 300 mW with a thermal resistance from junction to ambient of 416 K/W. The transition frequency (fT) reaches 420 MHz at IC = 100 mA.
Verify the ordering suffix matches the required packaging format. Confirm the component status is listed as production data sheet before initiating designs. Check for non-automotive qualification status if automotive reliability standards are required. Ensure the specific revision history aligns with project documentation requirements.
Select this component when PCB area reduction is critical compared to SC-75 or SC-89 packages. Consider the 15 V rating and 500 mA current capability for low-voltage switching tasks. Evaluate the 300 mW total power dissipation limit against thermal constraints. Verify compatibility with reflow soldering methods only.
This part belongs to the PBSS series of low VCEsat transistors designed for space-constrained applications. It serves as an NPN complement to the PBSS3515VS PNP double transistor. The SOT666 package allows replacement of two discrete transistors on the same PCB area, reducing pick and place costs.
PBSS3515VS is the PNP complement within the same package family.