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The Nexperia PBSS2515YPN-Q is a dual NPN/PNP low VCEsat transistor pair housed in a SOT363 (SC-88) surface-mounted plastic package. It features a maximum collector-emitter voltage of 15 V and a continuous collector current of 500 mA per transistor, with peak currents reaching 1 A. The device achieves a typical collector-emitter saturation resistance of 300 mΩ at 500 mA. Transition frequencies are specified at 420 MHz for the NPN section and 280 MHz for the PNP section. Total power dissipation is rated at 300 mW, and it operates within a junction temperature range up to 150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and manufacturing site codes. Ensure that the component meets the required AEC-Q101 qualification status if intended for automotive deployment. Cross-reference the marking code 'N8' with the datasheet to validate authenticity upon receipt.
Select this component when space constraints require replacing two discrete SC-70 transistors with a single dual package. Consider the 15 V voltage rating and 500 mA current limit for appropriate load matching. Evaluate the thermal resistance characteristics relative to the PCB copper area to ensure operation remains within the 150 °C junction temperature limit under expected duty cycles.
This part belongs to the PBSS2515 series of low VCEsat NPN/PNP transistor pairs manufactured by Nexperia. The '-Q' suffix indicates automotive qualification compliance. It serves as a compact alternative to standard small-signal bipolar junction transistors, designed specifically for applications requiring reduced board space and improved pick-and-place efficiency in consumer electronics and automotive systems.
PBSS2515YPN