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The Nexperia PBSS2515YPN,115 is a dual NPN/PNP transistor pair housed in a SOT363 (SC-88) surface-mount package. It features a maximum collector-emitter voltage of 15 V and a continuous collector current of 500 mA per transistor. The device offers low collector-emitter saturation resistance, typically 300 mΩ at 500 mA. Peak collector current reaches 1 A for single pulses up to 1 ms. Total power dissipation is rated at 300 mW with a junction temperature limit of 150 °C. Transition frequencies are specified at 420 MHz for the NPN element and 280 MHz for the PNP element.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and manufacturing site codes. Ensure the component version matches the latest product data sheet revision to guarantee compliance with current electrical specifications and marking requirements before integration into production designs.
Select this component when space constraints require replacing two separate SC-70 transistors with a single dual package. Evaluate the thermal resistance characteristics relative to the intended PCB footprint and copper area. Confirm that the 15 V voltage rating and 500 mA current limits align with the peak operational demands of the target circuit application.
This part belongs to the Nexperia PBSS series of low VCEsat transistors designed for compact consumer electronics. The SOT363 package provides a small form factor suitable for portable devices. The dual configuration integrates complementary NPN and PNP elements to simplify circuit layouts and reduce assembly complexity in signal processing paths.
Direct substitutes include other Nexperia dual transistors in the SOT363 package with matching 15 V ratings. Verify pinout compatibility and saturation voltage specifications when considering alternative manufacturers' components to ensure equivalent performance in existing board layouts.