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Product Detailed Parameters
- Description：TRANS 2NPN DUAL 60V 6.7A 8-SO
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：6.7A
- Voltage - Collector Emitter Breakdown (Max)：60V
- Vce Saturation (Max) @ Ib, Ic：350mV @ 350mA, 7A
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 4A, 2V
- Power - Max：2.3W
- Frequency - Transition：130MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The Nexperia PBSS4041SN,115 is a dual NPN Breakthrough In Small Signal (BISS) transistor housed in an SOT96-1 (SO8) plastic package. It features a collector-emitter voltage of 60 V and a continuous collector current of 6.7 A per transistor. The peak collector current reaches 15 A for single pulses up to 1 ms. Collector-emitter saturation resistance is specified at 32 mΩ to 48 mΩ under defined conditions. The device supports a maximum junction temperature of 150 °C and operates within an ambient range of -55 °C to +150 °C.
Feature Summary
- Very low collector-emitter saturation voltage
- High collector current capability
- High collector current gain at high currents
- Reduced printed-circuit board area requirements
Applications
- Load switch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches
Procurement Notes
Verify the complete part number including the ordering suffix against official Nexperia documentation before procurement. Confirm that the specific package variant matches the required footprint. Ensure compliance with RoHS directives if applicable to the target assembly process. Validate thermal dissipation capabilities based on the actual PCB copper area and mounting configuration used in the design.
Selection Notes
Select this component when a compact dual NPN solution with low saturation voltage is required. Evaluate the total power dissipation limits relative to the available cooling on the FR4 or ceramic substrate. Consider the transition frequency and switching times for high-speed load switching applications. Verify base drive current availability to maintain low saturation resistance during operation.
Part Context
This component belongs to the BISS transistor family designed for medium power surface-mount applications. It serves as a complement to other variants within the series, offering a dual configuration in a standard SO8 outline. The technology focuses on minimizing heat generation through efficient conduction characteristics compared to conventional discrete transistors.
Replacement Considerations
The datasheet identifies the PBSS4041SPN as the NPN/PNP complement. No other direct substitute part numbers are documented in the provided source material.
