PBSS4041SP,115

PBSS4041SP,115

  • Description:TRANS 2PNP DUAL 60V 5.9A 8-SO
  • Series:-

SKU:a7549cf59ebe Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2PNP DUAL 60V 5.9A 8-SO
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):5.9A
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Vce Saturation (Max) @ Ib, Ic:275mV @ 400mA, 4A
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 2A, 2V
  • Power - Max:2.3W
  • Frequency - Transition:110MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

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PBSS4041SP,115

Overview

The Nexperia PBSS4041SP,115 is a dual PNP Breakthrough In Small Signal (BISS) transistor housed in an SOT96-1 (SO8) surface-mount package. It features a collector-emitter voltage (VCEO) of -60 V and a continuous collector current (IC) of -5.9 A per transistor. The peak collector current (ICM) reaches -15 A for single pulses up to 1 ms. Key electrical characteristics include a maximum collector-base voltage (VCBO) of -60 V, an emitter-base voltage (VEBO) of -5 V, and a total power dissipation (Ptot) of 0.73 W at 25 °C ambient temperature on a standard FR4 PCB. The device operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

  • Very low collector-emitter saturation voltage (VCEsat) for high efficiency
  • High collector current capability (IC and ICM)
  • High DC current gain (hFE) maintained at high collector currents
  • Reduced heat generation compared to conventional transistors

Applications

  • Loadswitch circuits
  • Battery-driven devices
  • Power management systems
  • Charging circuits
  • Power switches for motors and fans

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when a compact dual PNP solution with high current handling is required. The BISS technology offers superior performance over discrete transistors by reducing PCB area and improving thermal efficiency. Ensure the application stays within the absolute maximum ratings for collector current and power dissipation, particularly regarding thermal resistance on the chosen PCB layout.

Part Context

This part belongs to the PBSS4041 series of low VCEsat BISS transistors from Nexperia. It serves as the PNP/PNP variant within the family, complementing the NPN/NPN version (PBSS4041SN). The series is designed to replace multiple discrete transistors in medium-power applications, offering integrated matching and reduced footprint through the SO8 plastic small outline package.

Replacement Considerations

Direct functional equivalents within the same package and specification range should be sourced from Nexperia's BISS portfolio. Verify pinout compatibility and ensure that any substitute meets the -60 V voltage rating and -5.9 A current requirements. Cross-referencing with the PBSS4041SN may be necessary if an NPN configuration is acceptable.

PBSS4041SP,115PBSS4041SP,115

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