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Product Detailed Parameters
- Description：PBSS4112PAN-Q/SOT1118/HUSON6
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN
- Current - Collector (Ic) (Max)：1A
- Voltage - Collector Emitter Breakdown (Max)：120V
- Vce Saturation (Max) @ Ib, Ic：260mV @ 50mA, 1A
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：240 @ 100mA, 2V
- Power - Max：510mW
- Frequency - Transition：120MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The PBSS4112PAN-Q is an NPN/NPN low VCEsat transistor manufactured by Nexperia, housed in a leadless DFN2020-6 (SOT1118) surface-mounted package. It supports a collector-emitter voltage of 120 V and a continuous collector current of 1 A, with a peak current capability of 1.5 A. The device features a maximum collector-emitter saturation resistance of 240 mΩ under specified pulsed conditions. Operating temperatures range from -55 °C to +150 °C junction temperature. The component is qualified according to the AEC-Q101 standard for automotive applications.
Feature Summary
- Very low collector-emitter saturation voltage for high energy efficiency
- High collector current gain at elevated currents
- Qualified according to AEC-Q101 for automotive use
Applications
- Load switch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and availability status. Confirm that the procurement channel provides valid traceability for AEC-Q101 qualified components intended for automotive integration. Ensure the received parts match the marking code '2R' as defined in the product data sheet.
Selection Notes
Select this component when designing circuits requiring dual NPN transistors with low saturation voltage in a compact footprint. Evaluate thermal performance based on the specific PCB copper thickness and layer count, as power dissipation varies significantly between single-sided and four-layer configurations. Ensure base drive currents are sufficient to maintain the low RCEsat characteristics during operation.
Part Context
This part belongs to the PBSS4112 series of low VCEsat transistors designed for medium power applications. The '-Q' suffix indicates qualification for automotive environments per AEC-Q101 standards. It serves as the NPN counterpart to the PBSS4112PANP-Q PNP/NPN complement. The DFN2020-6 package offers thermal enhancement suitable for space-constrained designs.
Replacement Considerations
Direct replacement requires verifying pin compatibility within the DFN2020-6 package and ensuring equivalent electrical ratings. Check if alternative suppliers offer AEC-Q101 qualified versions with identical thermal resistance characteristics for the target PCB layout.
