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Product Detailed Parameters
- Description：TRANS 2NPN 120V 1A 6HUSON
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：1A
- Voltage - Collector Emitter Breakdown (Max)：120V
- Vce Saturation (Max) @ Ib, Ic：120mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 500mA, 2V
- Power - Max：510mW
- Frequency - Transition：120MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：Automotive
- Qualification：AEC-Q100
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Overview
The PBSS4112PAN,115 is a dual NPN low VCEsat transistor manufactured by Nexperia in a DFN2020-6 (SOT1118) leadless package. It features a collector-emitter voltage (VCEO) of 120 V and a continuous collector current (IC) of 1 A per transistor. The peak collector current (ICM) reaches 1.5 A for single pulses up to 1 ms. Collector-emitter saturation resistance (RCEsat) is typically 240 mΩ at IC = 500 mA and IB = 50 mA. DC current gain (hFE) ranges from 240 to 375 at IC = 100 mA. Transition frequency (fT) is typically 120 MHz. Total power dissipation is 2 W at Tamb ≤ 25 °C on an FR4 PCB with standard footprint.
Feature Summary
- Very low collector-emitter saturation voltage for high energy efficiency
- High collector current capability supporting both continuous and pulsed loads
- High DC current gain maintained at elevated collector currents
- Leadless thermal enhanced ultra thin small outline package
Applications
- Load switch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and compliance status. Confirm that the component meets the required automotive or industrial qualification standards, as this specific part number is designated as non-automotive qualified according to the latest product data sheet revision.
Selection Notes
Select this component when a dual NPN configuration with high voltage blocking capability is required in a compact surface-mount form factor. Ensure the application circuit provides adequate base drive current to maintain the specified low saturation voltage. Verify thermal management requirements based on the expected duty cycle and PCB copper area, as power dissipation limits vary significantly with mounting conditions.
Part Context
This device belongs to the BISS (Breakthrough In Small Signal) family of low VCEsat transistors. It serves as the NPN/NPN complement within the series, distinct from the NPN/PNP variant (PBSS4112PANP) and the PNP/PNP variant (PBSS5112PAP). All variants share the same DFN2020-6 package dimensions and pinout arrangement.
Replacement Considerations
Direct functional substitutes include the PBSS4112PANP for complementary configurations and the PBSS5112PAP for PNP/PNP applications. For single-transistor replacements, verify voltage and current ratings match the original design constraints before substituting with other Nexperia BISS series components.
