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Product Detailed Parameters
- Description：TRANS 2NPN 30V 1A 6HUSON
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：1A
- Voltage - Collector Emitter Breakdown (Max)：30V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：210 @ 500mA, 2V
- Power - Max：510mW
- Frequency - Transition：165MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：Automotive
- Qualification：AEC-Q100
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Overview
The PBSS4130PAN,115 is a dual NPN low VCEsat Breakthrough In Small Signal (BISS) transistor manufactured by Nexperia. It is housed in a DFN2020-6 (SOT1118) leadless plastic package with six terminals. The device supports a maximum collector-emitter voltage of 30 V and a continuous collector current of 1 A per transistor, with a peak pulse current capability of 2 A. Key electrical parameters include a typical DC current gain (hFE) ranging from 180 to 370 depending on the collector current, and a collector-emitter saturation resistance (RCEsat) of 190 mΩ at 1 A. The transition frequency (fT) is typically 165 MHz. Thermal characteristics specify a junction-to-ambient thermal resistance varying based on PCB copper thickness and layer count.
Feature Summary
- Very low collector-emitter saturation voltage for high energy efficiency
- High collector current capability with reduced Printed-Circuit Board requirements
- Leadless medium power DFN2020-6 package for enhanced thermal performance
Applications
- Load switch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Confirm that the non-automotive qualification status aligns with the intended application environment, as automotive-grade alternatives may be required for regulated sectors.
Selection Notes
Select this component when a dual NPN configuration with low saturation voltage is required in a compact surface-mount footprint. Evaluate the thermal resistance values provided for different PCB copper weights and layer counts to ensure adequate heat dissipation under expected load conditions.
Part Context
This part belongs to the BISS (Breakthrough In Small Signal) transistor family designed for low voltage drop applications. It serves as the NPN/NPN complement to the PBSS4130PANP (NPN/PNP) and pairs with the PBSS5130PAP (PNP/PNP). The device utilizes silicon technology optimized for high current gain at elevated collector currents.
Replacement Considerations
Publicly confirmed complementary parts within the same series include the PBSS4130PANP and PBSS5130PAP. For single-transistor equivalents in similar packages, consider the PBSS4130T or PBSS4230 variants, though pinout and specific electrical ratings must be verified against the datasheet.
