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The PBSS4160DPN,115 is a complementary NPN/PNP low VCEsat transistor pair housed in a SOT457 (SC-74) TSOP6 surface-mounted package. It features a collector-emitter voltage of 60V and peak collector currents of 2A for the NPN and -2A for the PNP. The device offers high DC current gain, with typical values of 500 at 1mA for the NPN and 350 at -1mA for the PNP. Collector-emitter saturation resistance is typically 200mΩ for the NPN and 250mΩ for the PNP. Total power dissipation reaches 420mW on FR4 PCBs. Transition frequencies are 220MHz for the NPN and 185MHz for the PNP.
Verify component authenticity by checking the marking code B4 against official Nexperia documentation. Confirm the package type matches the SOT457 specification. Ensure the ordering suffix aligns with required packaging formats. Cross-reference the datasheet revision to guarantee parameter accuracy. Validate automotive qualification status if used in vehicle applications.
Select this component when space constraints require a complementary pair in a small footprint. Consider the low saturation voltage for minimizing conduction losses in switching applications. Evaluate thermal performance based on the specific PCB copper area available. Compare transition frequencies against signal requirements. Verify that the 60V rating meets the circuit's maximum voltage stress conditions.
This part belongs to the PBSS4160 series of low VCEsat transistors from Nexperia. It provides a complementary solution replacing discrete NPN and PNP transistors. The SC-74 package reduces printed-circuit board area compared to conventional setups. It serves as a direct replacement for older complementary pairs requiring similar electrical characteristics.
Check pinout compatibility with existing designs. Verify saturation voltage and current gain match system requirements. Ensure thermal resistance values suit the target application environment.