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The PBSS4160DS-QX is a dual NPN bipolar junction transistor (BJT) array manufactured by Nexperia USA Inc. It features a single-chip configuration with two independent NPN transistors housed in a compact 6-TSOP surface-mount package. The device supports a maximum collector-emitter voltage of 60 V and a continuous collector current of 1 A per transistor. Key electrical parameters include a transition frequency of 220 MHz, a maximum power dissipation of 420 mW, and a saturation voltage of 250 mV at specified currents. Designed for automotive applications, it holds AEC-Q100 qualification and operates within a temperature range up to +150 °C.
Verify the specific suffix against official Nexperia documentation to confirm exact tape-and-reel specifications and lot traceability requirements. Ensure that the procurement channel provides valid AEC-Q100 certification records. Confirm that the delivered components match the 6-TSOP physical dimensions and pinout defined in the datasheet to prevent assembly errors during manufacturing.
Select this component when a dual NPN solution is required for automotive-grade reliability and high-frequency switching. Compare the 60 V rating and 1 A current capacity against load requirements. Consider the 420 mW power dissipation limit and thermal management needs within the 6-TSOP footprint. Verify compatibility with existing PCB footprints designed for SOT-457 or SC-74 packages.
This part belongs to the PBSS4160 series of dual BJT arrays from Nexperia. The series includes variants such as PBSS4160U (single NPN), PBSS4160DPN (NPN/PNP pair), and PBSS4160DS (dual NPN). The -QX suffix typically denotes automotive-grade qualification and specific packaging formats within this product family.
Direct substitutes include other Nexperia dual NPN arrays like the PBSS4160DS,115. Verify pinout compatibility and electrical ratings before substituting with non-Nexperia equivalents. Ensure any replacement maintains AEC-Q100 compliance if used in automotive safety-critical applications.